Terahertz response of a field-effect transistor loaded with a reactive component

Mammeri, Abdel Majid; Mahi, Fatima Zohra; Marinchio, H.; Palermo, C.; Varani, L.

doi:10.1016/j.sse.2018.04.010

Cited by 3 publications

(3 citation statements)

References 27 publications

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“…Our pursuit extends beyond the confines of theoretical discourse; it involves the practicality of applying THz electric fields to gate and drain terminals, employing hydrodynamic simulations and the pseudo-2D Poisson equation to model THz signal detection, and systematically probing the impact of voltage polarization, gate geometry, and access region parameters on plasma wave resonance phenomena within HEMT structures [15,16].…”

Section: -2mentioning

confidence: 99%

Optimizing Terahertz Signal Detection in High Electron Mobility Transistors: Insights from Plasma Resonance Studies

Mahi,

Arbaoui,

Tadjeddine

et al. 2024

J. Nano- Electron. Phys.

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This analytical modeling study delves into the resonance behavior of plasma waves within the channel of High Electron Mobility Transistors (HEMTs) when subjected to Terahertz (THz) excitation. The core objective is to systematically examine the influence of various HEMT parameters on the dynamics of plasma resonance and the detection of THz signals. A noteworthy finding emerges: the most effective detection of THz signals materializes when both the gate and drain terminals simultaneously receive the THz excitation. Moreover, the modulation of biasing conditions, specifically represented by polarization voltages, exerts a substantial influence on plasma resonance frequencies, offering a promising avenue for tailoring HEMT responses. Further exploration reveals the substantial impact of access region characteristics, including length and doping concentration, on the excitation of 3D plasma waves within the HEMT, with the drain access region demonstrating particular significance. Additionally, we delve into the ramifications of gate geometry, encompassing width and channel-to-gate distance, revealing their capacity to significantly alter 2D plasma resonance frequencies. In extreme cases, the HEMT exhibits behavior akin to a simplified diode configuration, resulting in the absence of 2D plasma resonance. In summation, this research unfolds essential insights for the design and optimization of HEMT-based devices tailored to specific THz frequency applications. It underscores the pivotal roles of biasing conditions, access region properties, and gate geometries in shaping HEMT performance and THz signal detection.

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Section: -2mentioning

confidence: 99%

Optimizing Terahertz Signal Detection in High Electron Mobility Transistors: Insights from Plasma Resonance Studies

Mahi,

Arbaoui,

Tadjeddine

et al. 2024

J. Nano- Electron. Phys.

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“…Furthermore, High Electron Mobility Transistors (HEMT) have important electrical properties for several terahertz applications, such as detectors, emitters and amplifiers [14][15][16]. The study of HEMTs based on InGaAs material shows the existence of THz plasma-wave oscillations in the channel which leads to the appearance of terahertz resonances in the small-signal admittance spectrum as refered [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…For the THz antenna and detection, the analytical [17,23] and experimental [24,25] studies demonstrate the possibility of amplifying some terahertz frequencies (no more than 2 THz) by the InGaAs HEMTs when the resonant plasma frequency coincides with the frequency of the incoming monochromatic THz radiation. The analysis of HEMTs based on InGaAs material has been described in [14,17] and focus their behavior on terahertz frequencies. Several high-frequency HEMTs applications, sensing and amplification require the performance of resonances based on strong plasma mode oscillations in the transistor channel.…”

Section: Introductionmentioning

confidence: 99%

Plasma wave resonances in Graphene channels under controlled gate for high frequency applications

Mahi

Varani

2023

Mater. Res. Express

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Several devices based on 2D materials have become interesting for high-frequencyapplications especially sensors, amplifiers and modulators of Terahertz frequencies.Moreover, High Electron Mobility Transistors (HEMTs) have emerged as importantcompetitors owing to the high quality of resonances associated with plasma-waveoscillations in the channel. In this study, the plasma wave resonances in a Graphenechannel of High Electron Mobility Transistors (HEMTs) were studied. The calculationswere based on our small-signal model and therefore can determine the resonancesand voltage gain of the Monolayer and Bilayer graphene channels. The influence ofthe dielectric substrates between the gate and the channel, impurity depth positionsand channel materials (InGaAs, Bilayer and Monolayer graphene) on the dynamicbehavior of the Graphene transistor was investigated. This analysis can extract thehigh performance conditions of HEMTs Graphene amplifiers.

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Photoconductive response of a Field-Effect Transistor through the traps effect

Bouzidi

Mahi

Mahi³

et al. 2019

Optics Communications

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Terahertz response of a field-effect transistor loaded with a reactive component

Cited by 3 publications

References 27 publications

Optimizing Terahertz Signal Detection in High Electron Mobility Transistors: Insights from Plasma Resonance Studies

Optimizing Terahertz Signal Detection in High Electron Mobility Transistors: Insights from Plasma Resonance Studies

Plasma wave resonances in Graphene channels under controlled gate for high frequency applications

Photoconductive response of a Field-Effect Transistor through the traps effect

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