Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation

Lu, Ruifeng; Lu, Yu; Lee, S Y; Han, Keli; Deng, Wei

doi:10.1088/0957-4484/20/50/505401

Cited by 18 publications

(7 citation statements)

References 33 publications

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“…Further, they are currently extending this quantum method to two most active research areas: attosecond molecular dynamics [91][92][93][94][95] and nanotechnology. 96 Most recently, Yasuike et al 97 applied NTDQWP method 6,30 to study photoinduced coherent adsorbate dynamics on metal surface.…”

Section: Oþh 2 Reactionmentioning

confidence: 99%

Coriolis coupling and nonadiabaticity in chemical reaction dynamics

2010

J Comput Chem

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The nonadiabatic quantum dynamics and Coriolis coupling effect in chemical reaction have been reviewed, with emphasis on recent progress in using the time-dependent wave packet approach to study the Coriolis coupling and nonadiabatic effects, which was done by K. L. Han and his group. Several typical chemical reactions, for example, H+D(2), F+H(2)/D(2)/HD, D(+)+H(2), O+H(2), and He+H(2)(+), have been discussed. One can find that there is a significant role of Coriolis coupling in reaction dynamics for the ion-molecule collisions of D(+)+H(2), Ne+H(2)(+), and He+H(2)(+) in both adiabatic and nonadiabatic context.

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Section: Oþh 2 Reactionmentioning

confidence: 99%

Coriolis coupling and nonadiabaticity in chemical reaction dynamics

2010

J Comput Chem

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“…Actually, CNTFETs can play an important role in nanoelectronic devices such as transistors, memory components and digital logic devices [3]. Moreover, it has been reported that the terahertz (THz) cutoff frequency can be achieved with high frequency and low-noise transistor [4].…”

Section: Introductionmentioning

confidence: 99%

Performance and electrical characteristics of hybrid carbon nanotube field effect transistors

Ossaimee

Shaker

2016

Micro & Nano Letters

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The performance and electrical characteristics of hybrid carbon nanotube field effect transistor (CNTFET) are studied. Hybrid CNTFET consists of heavily doped carbon nanotube (CNT) as a one contact connected to intrinsic CNT as a channel. The opposite side of the channel is connected to a metal as the other contact. If the source is the metal and the drain is the heavily doped, this type is called metal-semiconductor hybrid CNT or MSH-CNTFET. While when the source is the heavily doped and the drain is the metal, this is called semiconductor-metal hybrid CNT or SMH-CNTFET. The electrical characteristics of the device has been studied using a two-dimensional (2D) quantum mechanical simulator by solving 2D Poisson's equation self consistently with Non-equilibrium Green function (NEGF). The proposed devices are found to overcome the ambipolar conduction of Schottky barrier CNTFETs and improve frequency performance of metal-oxide-semiconductor CNTFETs.

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“…These features make CNTFETs very suitable for high performance CMOS circuit applications. For example, recent progress in CNTFETs has been reported that the THz cutoff frequency can be achieved with highfrequency and low -noise transistor [1][2][3] .…”

Section: Introductionmentioning

confidence: 99%

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Wang¹,

Xu²,

Huang³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short -channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self -consistently with Poisson's equations. It is revealed that heteromaterial -gate and lightly doped drain and source CNTFET (HMG -LDDS -CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look -up table(LUT) based Verilog -A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Ф M1 /Ф M2 have been concluded in terms of power consumption, average delay, stability, energy consumption and power -delay product (PDP). In addition, we discuss and compare the CNTFETbased circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS -HMG -CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

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Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation

Cited by 18 publications

References 33 publications

Coriolis coupling and nonadiabaticity in chemical reaction dynamics

Coriolis coupling and nonadiabaticity in chemical reaction dynamics

Performance and electrical characteristics of hybrid carbon nanotube field effect transistors

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

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