Terahertz micromachined on-wafer probes: Repeatability and robustness

Chen, Lihan; Zhang, Chunhu; Reck, Theodore; Groppil, Christopher; Arsenovic, Alexander; Lichtenberger, Arthur W.; Weikle, Robert M.; Barker, N. Scott

doi:10.1109/mwsym.2011.5973455

Cited by 10 publications

(2 citation statements)

References 3 publications

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“…14 and 15, by aligning the micromachined probe to the test substrate, repeatable RF measurements can be achieved with significantly lower contact force ( 5 nM) compared to a previously reported value of 15 mN [16]. Consequently, extended probe lifetime beyond the 20 000 contact cycles reported in [8] is expected due to the lower impact on the probe tips without overdriving during the probe contact and even mechanical wear on each tip.…”

Section: B Rf Measurements Of Wr-15 Probesmentioning

confidence: 89%

Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor

Bauwens

Zhang

et al. 2013

IEEE Trans. Microwave Theory Techn.

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This paper introduces an improved method for monitoring and controlling the contact condition of terahertz on-wafer probes to enhance the measurement repeatability as well as probe lifetime. This method enables accurate contact force and contact angle measurements without modification to the standard probe station. Both probe contact force and contact angle are crucial for RF measurement repeatability. Repeatable probe contact force can be achieved by properly monitoring and controlling the strain generated at designated positions on the terahertz probe due to probe deformation induced by contacting the test substrate. Contact angle can be measured by asymmetrical strain on symmetrical positions of the probe when the probe is contacting the test substrate with angular misalignment. In this work a WR-1.5 (500 GHz-750 GHz) probe with integrated strain sensor is developed and tested. Mechanical tests show that the integrated sensors have a contact force resolution of 0.2 mN and a contact angle resolution of 0.05 about the center. RF tests show that repeatable measurements can be achieved with 3 mN contact force after adjusting probe contact angle using the integrated sensors, as compared to a previously reported value of 15 mN.Index Terms-Micromachining, probes, strain measurement, submillimeter wave measurement, thin film sensors.

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Section: B Rf Measurements Of Wr-15 Probesmentioning

confidence: 89%

Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor

Bauwens

Zhang

et al. 2013

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Within only three decades, RF probing technology made amazing progress from "it cannot be done" (late 1970s [1], [2]) to commercially available solutions for an extremely wide application range: impedance matching, multiport, differential and mixed-signal measurement up to 110 GHz (e.g., [3], [4]), temperatures beyond 500 °C [5] and down to 4 K (e.g., [6]- [8]), high-power measurements up to 60 W in continuous-wave mode [9], and terahertz (THz) applications up to 750 GHz ( Figure 1) [10], [11].…”

Section: Rf Probe Technologymentioning

confidence: 99%