Terahertz investigation of high quality indium nitride epitaxial layers

Meziani, Y. M.; Maleyre, B.; Sadowski, M. L.; Ruffenach, Sandra; Briot, Olivier; Knap, W.

doi:10.1002/pssa.200460434

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…Due to the superior properties over other semiconducting materials, the III-nitrides have also shown utility in the development of UV and IR detectors [29], room temperature spintronic applications [30], high electron mobility transistors [31], chemical and biological sensors [32], thermoelectric devices [33], terahertz radiation devices [34], and more recently nuclear detection [35].…”

Section: Applicationsmentioning

confidence: 99%

Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

Acharya

2015

Himalayan Physics

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Over the past two decades, group III-nitride semiconductors have become the focus of extremely intensive research due to their unique physical properties and their high potential for use in numerous electronic and optoelectronic devices. To date, almost all aspects of these materials have been explored, from understanding the fundamental physical properties to the development of fabrication technology of highly efficient devices for commercial use. In this article, some of the important physical properties and applications of III-nitride semiconducting materials have been presented.

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Section: Applicationsmentioning

confidence: 99%

Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

Acharya

2015

Himalayan Physics

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“…Therefore, the development and integration of InN and In-rich ternary alloys (e.g. In₁₋ x Ga x N and In₁₋ x Al x N) opens new avenues for the fabrication of THz emitters or detectors, 6 chemical sensor applications, 7 and high-efficient energy conversion devices, such as solid state lightning, 8 multi-tandem photovoltaics, 8 and monolithically integrated LED displays. 9 At present, the growth of high-quality InN material by conventional deposition techniques is limited due to low dissociation temperature of InN (~ 600 °C) and large differences in the partial pressures of the group III-V constituents.…”

Section: Introductionmentioning

confidence: 99%

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Atalay

Buegler

Gamage

et al. 2012

Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Ligh

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The dependency of the structural and optoelectronic properties of InN thin films grown by high-pressure chemical vapor deposition technique on the group V/III molar precursor ratio has been studied. X-ray diffraction, Raman spectroscopy, and IR reflectance spectroscopy have been utilized to study local-and long-range structural ordering as well as optoelectronic properties of the InN epilayers grown on crystalline sapphire substrates. The investigated InN epilayers were grown with group V/III molar precursor ratio varying from 900 to 3600, while all other growth parameters were kept constant. For a group V/III precursor ratio of 2400, the full width-half maximum of the Raman E 2 (high) mode and XRD (0002) Bragg reflex exhibit minimums of 7.53 cm⁻¹ and 210 arcsec, respectively, with maximized grain size and reduced in-plane strain effect. FTIR data analysis reveals a growth rate of 120 nm/hr, a carrier mobility of 1020 cm²V⁻¹s⁻¹, and a free carrier concentration of 1.7×10 18 cm⁻³ for a V/III ratio of 2400. The Raman analysis indicate that non-polar E 2 (high) mode position remains unaffected from a changing V/III ratio; whereas, polar A 1 (LO) mode position significantly changes with changing V/III ratio. Optical analysis also suggests that LO-phonon correlates with free carrier concentration (n e ) and TO-phonon correlates with free carrier mobility (μ) in the InN epilayers.

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“…The efficient visible luminescence of AlN nanostructures (shortly AlN NSs) in the 2-4 eV region makes it a promising candidate for light-emitting applications [10]. AlN/ GaN and graphene/AlN nanostructures are involved in the development of UV and IR detectors [11], room temperature spintronic devices [12], high electron mobility transistors [13], chemical and biological sensors [14], thermo-electric devices [15], terahertz radiation devices [16], and in recent years, nuclear detection [17].…”

Section: Introductionmentioning

confidence: 99%

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

Nersisyan

Lee

Kim

et al. 2019

International Materials Reviews

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Recent developments have seen breakthroughs in zero-, one-, two-, and three-dimensional AlN micro-and nanostructures, such as nanoparticles, nanowires, nanotubes, thin films and 3D multifold symmetry crystals. The attractive electrical, optical, and thermal properties of AlN make these materials irreplaceable for microelectrochemical systems (MEMS), surface acoustic waves (SAWs) and light emitting diodes (LED). The significant interest in the field of AlN nanostructure synthesis and application encouraged us to summarise the reported data to better understand the physical and chemical aspects of AlN crystal growth processes. Four main topics are covered in this review article: (1) the morphological diversity of AlN nanoand microstructures; (2) formation mechanisms and growth dynamics; (3) theoretical simulation of growth processes based on density functional theory (DFT) and phase field (PF) modelling approaches; (4) application and devices. This article also provides a perspective on future research relevant to AlN micro-and nanostructures.

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Terahertz investigation of high quality indium nitride epitaxial layers

Cited by 10 publications

References 7 publications

Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

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