Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors

Maremyanin, K. V.; Иконников, А. В.; Bovkun, L. S.; Rumyantsev, V. V.; Chizhevskii, E. G.; Zasavitskiǐ, I. I.; Гавриленко, В. И.

doi:10.1134/s1063782618120163

Cited by 17 publications

(10 citation statements)

References 6 publications

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“…To mention as an instance, quasirelativistic electron–hole dispersion is believed to be the reason of Auger suppression in PbSnSe and PbSnTe compounds . As a consequence, lead salt diodes operate at wavelengths up to 50 μm, despite high residual carrier concentration resulting from impurities and defects. However, the figures of merit for such lasers are limited by the growth technology.…”

Section: Introductionmentioning

confidence: 99%

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Rumyantsev

Fadeev

Aleshkin

et al. 2019

Physica Status Solidi (b)

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Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/ HgCdTe quantum well (QW) heterostructures are studied in 5-20 mm wavelength range in regard to long-wavelength lasing applications. The authors obtain carrier lifetimes using time-resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non-radiative one as the bandgap is decreased, limiting the "operating" temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75 K improvement in the "operating" temperature in structure with narrower QW.of the band structure of narrow-gap HgTe/ HgCdTe heterostructures on carrier recombination mechanisms. [4] Recently, it was shown that HgCdTe-based QW can provide stimulated emission in the very longwavelength IR, [5] suggesting that such structures can be interesting for longwavelength emitters.At present moment, the best-performing semiconductor sources for far IR range are quantum cascade lasers (QCLs). They demonstrate ultimate figures of merit almost in the entire IR range. [6] The only "blind spot" of QCLs caused by the strong lattice absorption in traditional production materials (GaAs and InP) lies at wavelengths between 20 and 60 μm. InAs-based and Al-free QCLs are tackling this wavelength range from the mid-IR side, [7] while GaN QCLs have been proposed for frequencies above 5 THz. [8] However, interband lasers are also of interest since they are less demanding from the technological viewpoint and allow wavelength tuning with temperature. The cornerstone of effective light emitter, especially in far infrared range (FIR) range, is to suppress the non-radiative recombination, in

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Section: Introductionmentioning

confidence: 99%

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Rumyantsev

Fadeev

Aleshkin

et al. 2019

Physica Status Solidi (b)

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“…Although AR suppression and THz emission can be studied in other materials with Dirac energy spectra like InAs/GaSb 22 QWs or PbSnSe(Te) 23 alloys, we choose HgCdTe because it combines a number of advantages:…”

Section: ■ Carrier Recombinationmentioning

confidence: 99%

“…However, though the incumbent QCLs demonstrate excellent performance both in IR and THz regions, they are mainly based on III-V materials and therefore encounter significant problems within the Reststrahlen bands of these semiconductors . In particular, QCLs , are scarce in the “gap” from 5 to 15 THz, yet coherent tunable sources would nevertheless be useful for spectroscopy in this region, offering an alternative to the lead salt lasers. ,, Nowadays, the progress in MBE makes it possible to reconsider HgCdTe-based structures for THz optoelectronics . SE at wavelengths of up to 20 μm was achieved in HgCdTe QWs in the past years, and gapless HgCdTe bulk crystals have been recently proposed for a Landau level laser operating in the THz range due to suppression of Auger scattering under a magnetic field …”

Section: Carrier Spectrum and Light Confinement In Structures Under S...mentioning

confidence: 99%

Coherent Emission in the Vicinity of 10 THz due to Auger-Suppressed Recombination of Dirac Fermions in HgCdTe Quantum Wells

et al. 2021

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The discovery of Dirac fermions in a number of 2D and 3D materials boosted the solid-state research in an unprecedented way. Among the many hopes of using their exceptional physical properties, it has been argued that their reduced nonradiative losses would allow graphene to compete with quantum cascade lasers (QCLs) in the race for terahertz (THz) emitters. Unfortunately, the nonradiative Auger recombination (AR) process is still active for massless fermions in gapless graphene. However, for massive Dirac fermions, AR can be entirely suppressed below a certain threshold of the carrier’s kinetic energy that depends on the nonparabolicity and the symmetry of the electron and hole dispersions. In this work, by finely tuning the band structure of HgCdTe quantum wells hosting massive Dirac fermions, we set the electronic system below this threshold and demonstrate that the carrier recombination is purely radiative. A coherent interband emission reaching 9.6 THz, that is to say outside the spectral range of current QCLs, is measured under these conditions, opening the way to lossless interband THz emitters.

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“…GaN QCLs attempt to enter the 5-15 THz "gap" from the low-frequency side, but their performance is yet to be improved [1,8]. The spectral range from 28 μm to 60 μm is now partly covered only with the lead salt diode lasers, which provide emission wavelengths up to 50 μm [9]. In PbSnSe(Te) ternary alloys the nonradiative Auger recombination is known to be suppressed due to the symmetry between the dispersion laws in the conduction band and in the valence band [10].…”

Section: Introductionmentioning

confidence: 99%

Plasmon recombination in narrowgap HgTe quantum wells

Aleshkin¹,

Alymov²,

Dubinov³

et al. 2020

J. Phys. Commun.

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The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas corresponding to ‘switching-on’ the carrier recombination with plasmon emission. The recombination rates with the plasmon emission have been calculated. The ‘plasmon’ recombination is shown to dominate at the carrier concentration over (1.2–2) 1011 cm−2 in a 5-nm-wide HgTe quantum well (band gap of 35 meV) that makes plasmon generation (spasing) in THz frequency range feasible.

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Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors

Cited by 17 publications

References 6 publications

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Coherent Emission in the Vicinity of 10 THz due to Auger-Suppressed Recombination of Dirac Fermions in HgCdTe Quantum Wells

Plasmon recombination in narrowgap HgTe quantum wells

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