Terahertz impurity luminescence under the interband photoexcitation of semiconductors

Andrianov, A. V.; Zakhar’in, A. O.; Ivanov, Yu. L.; Kipa, M. S.

doi:10.1134/s0021364010020098

Cited by 36 publications

(8 citation statements)

References 10 publications

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“…Таким образом, ШРХ процесс может оказаться частично излучательным. Эти излучательные процессы наблюдались при исследованиях фотолюминесценции (ФЛ) ряда полупроводников и низкоразмерных гетероструктур [10,11].…”

Section: Introductionunclassified

Влияние оптических фононов на гашение фотолюминесценции вакансий ртути в узкозонных твердых растворах HgСdTe при повышении температуры

Козлов¹,

Румянцев²,

Алешкин³

et al. 2022

Физика И Техника Полупроводников

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Рассчитаны времена захвата дырок на основной уровень нейтральной вакансии ртути в твердом растворе Hg1-xСdxTe при испускании оптического фонона. Расчет показал, что этот процесс может конкурировать с захватом дырок на мелкие возбужденные состояния вакансионных центров с испусканием акустических фононов. Такая конкуренция может приводить к гашению линий в спектре вакансионной фотолюминесценции слоев Hg1-xСdxTe при увеличении температуры. Ключевые слова: вакансии ртути, оптические фононы, безызлучательные переходы.

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Section: Introductionunclassified

Влияние оптических фононов на гашение фотолюминесценции вакансий ртути в узкозонных твердых растворах HgСdTe при повышении температуры

Козлов¹,

Румянцев²,

Алешкин³

et al. 2022

Физика И Техника Полупроводников

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“…In Ref. [3] terahertz luminescence under the interband photoexcitation of bulk n-GaAs and p-Ge semiconductors at low temperatures was reported. The terahertz photoluminescence was caused by intraband radiative carrier transitions which accompany the capture of non-equilibrium carriers by impurity centres.…”

Section: Introductionmentioning

confidence: 99%

Impurity-related terahertz emission from quantum well nanostructures

Firsov¹,

Vorobjev²,

Panevin³

et al. 2014

Lith. J. Phys.

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Terahertz emission in GaAs/AlGaAs quantum well structures doped with shallow impurities was studied in conditions of interband optical excitation for n-doped structures and impurity breakdown in the lateral electric field for p-doped structures. Emission spectra were obtained. It was shown that the observed emission is related to optical transitions of charge carriers between impurity levels and to impurity-band transitions. The depopulation of the final states under interband optical pumping was realized with recombination of non-equilibrium holes and electrons localized at neutral donors.

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“…However, these THz emissions can be observed only at cryogenic temperatures. [8][9][10][11][12][13][14][15][16][17] In this paper, an efficient continuous wave (CW) THz emission over 120 K is demonstrated. THz emission at high temperature is observed from S.I.-GaAs crystal with EL2 level with below gap carrier excitation.…”

mentioning

confidence: 99%

“…has been reported since 1960. [8][9][10][11][12][13][14][15][16][17] It has been reported that this emission mechanism is due to the recombination process of hot electrons (or holes) with shallow impurity levels. This is one of the promising methods for the realization of finger top size terahertz emitter.…”

mentioning

confidence: 99%

Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

Oyama

Dezaki

Shimizu

et al. 2015

Applied Physics Letters

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Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the terahertz wave emission mechanisms, the emission spectra and temperature dependence of the emission intensity are evaluated. It is shown that intense terahertz emission from S.I.-GaAs over 120 K is observed due to the thermal recovery of photo-quenched EL2 meta-stable state, and that the emission peak frequency looks to be attributed to the shallow level energy in GaAs. V C 2015 AIP Publishing LLC. [http://dx.

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Terahertz impurity luminescence under the interband photoexcitation of semiconductors

Cited by 36 publications

References 10 publications

Влияние оптических фононов на гашение фотолюминесценции вакансий ртути в узкозонных твердых растворах HgСdTe при повышении температуры

Влияние оптических фононов на гашение фотолюминесценции вакансий ртути в узкозонных твердых растворах HgСdTe при повышении температуры

Impurity-related terahertz emission from quantum well nanostructures

Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

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