2017
DOI: 10.1063/1.4993634
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Terahertz imaging using photomixers based on quantum well photodetectors

Abstract: Due to the fast intersubband transitions, the terahertz (THz) quantum well photodetector (QWP) is supposed to work fast. Recently it has been demonstrated that the THz QWP can detect the THz light modulated at 6.2 GHz and therefore it can be used as a photomixer [H. Li et al., Sci. Rep. 7, 3452 (2017)]. In this work, the authors report a novel active THz imaging using THz QWP photomixers. The THz radiation source used for this imaging application is a multi-mode THz quantum cascade laser (QCL) operating in con… Show more

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Cited by 6 publications
(1 citation statement)
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“…[4][5][6][7][8] Additionally, due to the inherent short carrier lifetime, THz QWPs are very attractive in many high-speed applications. [9][10][11][12] The active region of QWPs, which consists of multiple-quantum-well (MQW) structures, can only respond to the light that satisfies the intersubband transition (ISBT) rules, [13][14][15] so the incident planes of the devices are usually polished to an angle of 45 • . [16][17][18] Generally, the ohmic contact resistance of the THz QWPs is relatively high (∼ 100 Ω) due to the low doping density of the top and bottom contact layers, [16,19] while if we raise the doping density of the contact layers, the dark current of the device will be relatively high.…”
Section: Introductionmentioning
confidence: 99%
“…[4][5][6][7][8] Additionally, due to the inherent short carrier lifetime, THz QWPs are very attractive in many high-speed applications. [9][10][11][12] The active region of QWPs, which consists of multiple-quantum-well (MQW) structures, can only respond to the light that satisfies the intersubband transition (ISBT) rules, [13][14][15] so the incident planes of the devices are usually polished to an angle of 45 • . [16][17][18] Generally, the ohmic contact resistance of the THz QWPs is relatively high (∼ 100 Ω) due to the low doping density of the top and bottom contact layers, [16,19] while if we raise the doping density of the contact layers, the dark current of the device will be relatively high.…”
Section: Introductionmentioning
confidence: 99%