Terahertz Even-Order Subharmonic Mixer Using Symmetric MOS Varactors

Zhong, Qishui; Choi, Wooyeol; O, Kenneth K.

doi:10.1109/jssc.2020.3024177

Cited by 14 publications

(9 citation statements)

References 31 publications

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“…6 shows the double side band (DSB) noise figures from the literature versus operating frequency for coherent receivers fabricated using NMOS transistors and MOS varactors in CMOS. Coherent detection up to 1.2 THz has been demonstrated in CMOS [33]. The lowest measured DSB noise figures for CMOS receivers are 11 dB at 260 GHz [34], 11.5 dB at 280 GHz [35] and 14 dB at 420 GHz [36].…”

Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 98%

“…At frequencies above 420 GHz, noise figures of CMOS circuits increase with a slope of ~70 dB/decade due to the use of higher order subharmonic mixing [33], [37], [38]. The amplitude of frequency multiplied LO signal is not sufficiently high to properly switch devices due to the increased loss of high order frequency multiplication and operating frequency.…”

Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 99%

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CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Choi

Zhu

et al. 2023

IEEE Open J. Solid-State Circuits Soc.

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CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC's) technology is emerging as a means for realization of capable and affordable systems that operate at frequencies near 300GHz and higher. This is lowering a key barrier for utilizing the sub-millimeter electromagnetic waves in everyday applications. Despite the fact that the unity maximum available gain frequency, f max of NMOS transistors (with connections to the tope metal layer) has peaked at ~320 GHz, signal generation up to 1.33 THz, coherent detection up to 1.2 THz and incoherent detection up to ~10 THz have been demonstrated using CMOS integrated circuits. Furthermore, highly integrated rotational spectroscopy transceivers operating at frequencies up to near 300 GHz, 300-GHz and 400-GHz concurrent transceiver pixels and arrays for high resolution radar imaging, and 300-GHz and 390-GHz transmitters, and 300-GHz receivers for high data-rate communication have been demonstrated in CMOS. The performances of these CMOS circuits are sufficient or close to being sufficient to support electronic smelling using rotational spectroscopy that can detect and quantify concentrations of a wide variety of gases; imaging that can enable operation in a wide range of visually impaired conditions; and high-bandwidth communication. Lastly, techniques for affordable packaging and testing sub-millimeter wave systems are suggested based on experimental demonstrations.

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Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 98%

Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 99%

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Choi

Zhu

et al. 2023

IEEE Open J. Solid-State Circuits Soc.

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“…Note that the core frequency mixing device of almost all silicon THz RXs is a MOS or HBT transistor. In comparison, a recent work in [48] reported an even-order subharmonic mixer using a pair of symmetric MOS varactors [49]. Reactive mixing using varactors, compared to the resistive mixing by transistors, are expected to offer lower loss, lower noise, and higher dynamic cutoff frequency.…”

Section: B Thz Incoherent and Coherent Detectionmentioning

confidence: 99%

Emerging Terahertz Integrated Systems in Silicon

Wang

et al. 2021

IEEE Trans. Circuits Syst. I

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Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the past decade. The demonstrated basic component performance, as well as the maturity of design tools and methodologies, have made it possible to build high-complexity THz integrated systems. Such implementations are undoubtedly highly attractive due to their low cost and high integration capability; however, their unique characteristics, both advantageous and disadvantageous, also call for research investigations into unconventional systematic architectures and novel THz applications. In this paper, we review Manuscript

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“…All the losses of the probes, waveguide, and cables are de-embedded from the measurement results. The conversion loss and noise figure are estimated by the methods introduced in work [15]. The maximum output power of the 200GHz LO FEM is -2dBm.…”

Section: Fabrication and Measurementmentioning

confidence: 99%

“…However, the integration level is still not suitable for size-constraint applications, especially for THz complex system. Then, to decrease the size, integrated circuit mixers and down-converters based on CMOS [9]- [15] and SiGe [16]- [21] technologies are introduced. In these technologies, the operation frequency of mixer is usually higher than the cutoff frequency of devices.…”

Section: Introductionmentioning

confidence: 99%

An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology

Zhou

Luo

2021

IEEE Microw. Wireless Compon. Lett.

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In this letter, an 820GHz down-converter based on subharmonic mixer and low noise amplifier (LNA) with low conversion loss and noise figure is proposed. To reduce the frequency of local oscillation (LO) signal, a 4 th subharmonic architecture is adopted for the mixer implementation. Meanwhile, to improve the isolation of the mixer, a low-loss matching network based on λ/4 resonators with ground shields is introduced in the terahertz (THz) signal path. Then, the 4-stage common-source LNA is utilized to amplify the down-conversion IF signal. Using a conventional 40-nm CMOS technology, the implemented THz down-converter exhibits 9.9dB conversion loss and 39.2dB noise figure with -6dBm LO input power at 820GHz. The core chip only occupies 0.74×0.25 mm 2 , while dissipating 28.6mW from 1.1V voltage supply.

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Terahertz Even-Order Subharmonic Mixer Using Symmetric MOS Varactors

Cited by 14 publications

References 31 publications

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Emerging Terahertz Integrated Systems in Silicon

An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology

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