Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors

Petrov, B. K.; Fekecs, A.; Sarra-Bournet, Christian; Arès, Richard; Morris, Denis

doi:10.1109/tthz.2016.2591830

Cited by 5 publications

(4 citation statements)

References 31 publications

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“…Regarding receiver noise, the variance of the captured signals was calculated at their steady-state regime using 50 samples. It was observed that for all cases, σ 2 N was approximately 2.2•10 −3 K 2 . An equality test for variances (Snedecor-Fisher test) was carried out by pairs, resulting in no significant differences (maximum p-value 0.0289).…”

Section: Bit Error Ratementioning

confidence: 84%

“…Terahertz wave generation is generally a complex procedure and several strategies can be found in the literature. Photoconductive stripline antennas [2,3], quantum cascade lasers [4], and photoionization [5] are the most used techniques. These methods present low conversion efficiencies and in some cases, as quantum cascade lasers, they usually need from cryogenic temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and Performance of a Thermal Camera Communication System

Guerra

Ticay-Rivas

Alonso-Eugenio

et al. 2020

Sensors

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This work presents a novel communications technology named Thermal Camera Communication (TCC), which is analogous to Optical Camera Communication (OCC). Thermographic cameras and Peltier cells are proposed as receiver and transmitter, respectively, changing completely their usual field of application. Furthermore, a comprehensive characterization of the Peltier–Thermal camera pair is carried out, presenting their bandwidth, achievable data rate under On-Off-Keying (OOK) modulation, noise characteristics, and energy efficiency. A comparison against the current state-of-the-art OCC technology is also provided, showing that TCC is a promising technology suitable for sensor networks. The thorough analysis of TCC performed in this work shows that commercial Peltier cells can be re-thought under a communications viewpoint in order to improve their performance. This novel communication technology can be applied in environments such as the access to public transportation or buildings due to the new health emergency situation. The use of thermographic cameras will become massive and dual measurement and communication purposes could be considered for applications such as sensor networks, using a yet unexploited wavelength range.

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Section: Bit Error Ratementioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Characterization and Performance of a Thermal Camera Communication System

Guerra

Ticay-Rivas

Alonso-Eugenio

et al. 2020

Sensors

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“…As demonstrated above, the photoresponse of the devices can be influenced by low dark resistance, which further deteriorates their triggering rate. The work presented in [26] evaluated the emission characteristic of a PCA based on a Fe-doped InGaAsP material system, and the researchers showed that the nonuniformity of resistivity is likely caused by the recrystallization process in the InGaAsP/InP heterostructure. This nonuniform resistivity profile deteriorates the performance of the PCA emitter under excitation.…”

Section: Resultsmentioning

confidence: 99%

High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature

Dai,

Liu,

et al. 2023

Crystals

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InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 °C was applied. The electrical properties were conducted via Hall effect measurement and a photoresponse test. The experimental results demonstrate that the sample grown at 257.5~260 °C exhibits the highest resistivity (1290 Ω × cm) and lowest carrier concentration (3.18 × 1014 cm−3), along with the highest mobility (187.2 cm2/Vs). Furthermore, the highest photoresponse (1.21) relative to dark resistivity was obtained under 1500 nm excitation. The optimized growth parameter of InGaAs/InAlAs multilayered structures is of great significance for fabricating high-performance terahertz photoconductive semiconductor antennas.

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“…The main development challenge with InGaAs-based photoconductors is relatively small bandgap resulting in low breakdown field strength and large dark background conductivity. Several methods for producing ultrafast InGaAs photoconductive structures have been proposed: ion implantation with heavy ions followed by thermal annealing treatment [8,9], epitaxial doping of InGaAs with impurities producing deep electronic traps in the bandgap [10,11], and growth of specially designed heterostructures such as ErAs inclusions in InGaAlAs [12]. The low-temperature (LT) InGaAs-based epitaxial structures are widely used in commercial THz systems.…”

Section: Introductionmentioning

confidence: 99%

Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates

et al. 2020

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The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated.

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Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors

Cited by 5 publications

References 31 publications

Characterization and Performance of a Thermal Camera Communication System

Characterization and Performance of a Thermal Camera Communication System

High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature

Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates

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