Terahertz emission induced by optical beating in nanometer-length field-effect transistors

Nouvel, P.; Torres, J.; Blin, S.; Marinchio, H.; Laurent, T.; Palermo, C.; Varani, L.; Shiktorov, P.; Starikov, E.; Gruz̆inskis, V.; Теппе, Ф.; Roelens, Y.; Shchepetov, A.; Bollaert, S.

doi:10.1063/1.4718445

Cited by 17 publications

(8 citation statements)

References 32 publications

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“…Such instabilities/resonances, occurring in the terahertz (THz) range for nanometric devices, can be used in view of the development of solid-state emitters or detectors of THz radiation. These possibilities have been confirmed experimentally by measurements of plasma instabilities at low temperature [3,4] and plasma resonances to external excitations (THz wave or THz optical beating) at room-temperature [5].…”

Section: Introductionmentioning

confidence: 53%

Hybrid plasma modes in transistors: linear and non-linear responses

Marinchio

Korotyeyev

Palermo

et al. 2015

J. Phys.: Conf. Ser.

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Section: Introductionmentioning

confidence: 53%

Hybrid plasma modes in transistors: linear and non-linear responses

Marinchio

Korotyeyev

Palermo

et al. 2015

J. Phys.: Conf. Ser.

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“…In particular, it has been proved both by experiments and by numerical simulations that the excitation of plasma modes in the transistor channel increases significantly the efficiency of room-temperature direct and heterodyne detection in the THz frequency range [1], [2]. Additionally, as shown by recent experiments, under special excitation and biasing conditions, stream-plasma instabilities leading to the emission of THz radiation may also be created in the transistor channel [3]. For these reasons, modern FETs are among the most promising devices for the development of low-cost THz detectors and emitters working at room temperature.…”

Section: Introductionmentioning

confidence: 95%

Terahertz detection and electronic noise in field-effect transistors

Mahi

Belghachi

Marinchio

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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High electron-mobility transistors can be used as efficient detectors of an incident THz radiation on its metallic electrodes. This detection can become strongly resonant if the frequency of the THz radiation coincides with plasma eigenfrequencies of the transistor channel. By using a hydrodynamic model we investigate in parallel the transistor intrinsic highfrequency current noise spectrum and its harmonic and average current responses to a voltage perturbation at the electrodes. In both cases we discuss the appearance of resonances associated with the excitation of 2D and 3D plasma modes and, to get an additional physical insight into the properties of the different parts of the transistor, we compute also the local noise spectra originated by electron velocity perturbations distributed in the channel. We demonstrate that the main resonances in the drain current noise spectrum are the same as those observed in the current response to an external THz excitation thus confirming the strong link existing between these two quantities.

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“…Mainly, this is associated with the possibility of easy tuning the 2D plasma excitation spectrum inside the transistor channel by changing the external conditions, namely: gate voltage, drain voltage, operation regime, etc [5][6][7]. Indeed, under special excitation and biasing conditions, stream-plasma instabilities leading to the emission of THz radiation may be created in the transistor channel [8,9]. On the other hand, it has been proved both by experiments and numerical simulations that the excitation of plasma modes in the transistor channel increases significantly the eciency of room-temperature direct and heterodyne detection in the THz frequency range [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Plasmonic noise of field-effect transistors operating at terahertz frequencies

Palermo¹,

Mahi²,

Marinchio³

et al. 2016

J. Stat. Mech.

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We analyze electronic noise in field-effect transistors associated with plasma waves in the terahertz frequency domain by using a numerical approach based on the coupled hydrodynamic and Poisson equations. The current and voltage noise spectra, calculated by means of the transfer impedance method, exhibit a series of peaks associated with two- and three-dimensional plasma resonances. The two-dimensional plasma peaks have been found to depend on the channel length including gated and ungated regions. Under asymmetric boundary conditions, electrical instabilities characterized by terahertz oscillations of the drain voltage and gate current can be reached at sufficiently high values of the total drain current. A resonant enhancement of the plasma peaks in the noise spectra has been found to be a precursor of the instability onset. Through a spatial analysis of the local contributions we have shown that the main contribution to the total noise at frequencies near the plasma resonance comes from the ungated n-region placed between the source and the gate contacts.

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Terahertz emission induced by optical beating in nanometer-length field-effect transistors

Cited by 17 publications

References 32 publications

Hybrid plasma modes in transistors: linear and non-linear responses

Hybrid plasma modes in transistors: linear and non-linear responses

Terahertz detection and electronic noise in field-effect transistors

Plasmonic noise of field-effect transistors operating at terahertz frequencies

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