The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling structures (RTS) are engineered to exhibit electronic instabilities within the positive-differential-resistance (PDR) region. As will be demonstrated, this approach utilizes a microscopic instability that alleviates the need to reduce device area (and therefore output power) in an effort to achieve lowfrequency stabilization