Terahertz detection with tunneling quantum dot intersublevel photodetector

Su, Xiaojia; Yang, Jun; Bhattacharya, P.; Ariyawansa, G.; Perera, A. G. U.

doi:10.1063/1.2233808

Cited by 67 publications

(51 citation statements)

References 19 publications

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“…RT-QDIPs are especially promising as far-IR and terahertz photodetectors due to the suppression of dark current at higher operating temperatures [93,94]. A RT-QDIP using an In0.6Al0.4As/GaAs QD active region has demonstrated spectral response peaking at 50 µm, with peak responsivity of 0.45 A/W and specific detectivity of 10 8 cm Hz [94].…”

Section: Qdip Bandstructure Engineeringmentioning

confidence: 99%

“…A RT-QDIP using an In0.6Al0.4As/GaAs QD active region has demonstrated spectral response peaking at 50 µm, with peak responsivity of 0.45 A/W and specific detectivity of 10 8 cm Hz [94]. While this device performance was obtained at 4.6 K, THz spectral response was observed at temperatures as high as 150 K. It is also interesting to note that RT-DWELLQDIPs have been demonstrated, yielding a reduction in dark current by two orders of magnitude and an increase in peak detectivity by five times compared to a DWELL control device [95].…”

Section: Qdip Bandstructure Engineeringmentioning

confidence: 99%

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Quantum-dot infrared photodetectors: a review

Stiff‐Roberts

2009

J. Nanophoton

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Abstract. Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot nonuniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.Keywords: InAs/GaAs quantum dots, colloidal quantum dots, quantum-dot infrared photodetectors, QDIP focal plane arrays.

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Section: Qdip Bandstructure Engineeringmentioning

confidence: 99%

Section: Qdip Bandstructure Engineeringmentioning

confidence: 99%

Quantum-dot infrared photodetectors: a review

Stiff‐Roberts

2009

J. Nanophoton

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“…Using the resonant tunnelling approach, successful results were reported [6] on a terahertz T-QDIP detector (MG764) responding at 6 THz (50 µm) for a temperature of 150 K. In order to obtain a transition leading to a response in the terahertz region, smaller n-doped QDs having two-bound states were used in the structures. As a result, the energy separation between the second state in the quantum dot and the resonant state in the well was reduced, while doping raised the Fermi level above the second state in the QD.…”

Section: Tunnelling Quantum Dot Terahertz Detectorsmentioning

confidence: 99%

“…In order to decrease the dark current further, a tunnelling quantum dot infrared photo detector (T-QDIP) structure was studied [5]. Successful results on a two-colour T-QDIP with photoresponse peaks at 6 µm and 17 µm operating at room temperature [5], and a terahertz T-QDIP responding [6] at 6 THz (50 µm) for a temperature of 150 K have been previously reported. In the T-QDIP structure grown by molecular beam epitaxy (MBE), a QD (InGaAs or InAlAs) is placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it.…”

Section: Introductionmentioning

confidence: 99%

Wavelength and polarization selective multi-band tunnelling quantum dot detectors

Perera

Ariyawansa

Apalkov

et al. 2007

Opto-Electronics Review

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The reduction of the dark current without reducing the photocurrent is a considerable challenge in developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The work reported here discusses multi-band tunnelling quantum dot infrared photo detector (T-QDIP) structures designed for high temperature operation covering the range from mid-to far-infrared. These structures grown by molecular beam epitaxy consist of a QD (InGaAs or InAlAs) placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it. The photocurrent, which can be selectively collected by resonant tunnelling, is generated by a transition of carriers from the ground state in the QD to a state in the well coupled with a state in the double-barrier system. The double-barrier system blocks the majority of carriers contributing to the dark current. Several important properties of T-QDIP detectors such as the multi-colour (multi-band) nature of the photoresponse, the selectivity of the operating wavelength by the applied bias, and the polarization sensitivity of the response peaks, are also discussed.

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“…the QD1-layer is realized by Al 0.03 In 0.97 As and the QD2-layer by In 0.5 Ga 0.5 As. The small migration rate of Al adatoms should force the formation of small QDs with a large density, increasing the quantum efficiency [27]. The reason not to use AlInAs QDs for the QD2-layer was that the composition of InGaAs-QDs is easier to control.…”

Section: Device Simulationmentioning

confidence: 99%

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors can be separated into two parts: an injection part and a detection part, so that each part can be separately optimized. In order to integrate such functionality into a device, a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced. In addition to a general discussion simulation results suggest a possibility to realize such a device.

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Terahertz detection with tunneling quantum dot intersublevel photodetector

Cited by 67 publications

References 19 publications

Quantum-dot infrared photodetectors: a review

Quantum-dot infrared photodetectors: a review

Wavelength and polarization selective multi-band tunnelling quantum dot detectors

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

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