Terahertz detection based on nonlinear Hall effect without magnetic field

Abstract

We propose a method for broadband long-wavelength photodetection using the nonlinear Hall effect in non-centrosymmetric quantum materials. The inherently quadratic relation between transverse current and input voltage at zero magnetic field is used to rectify the incident terahertz or infrared electric field into a direct current, without invoking any diode. Our photodetector operates at zero external bias with fast response speed and has zero threshold voltage. Remarkably, the intrinsic current responsivity due to Berry curvature mechanism is a material property independent of the incident frequency or the scattering rate, which can be evaluated from first-principles electronic structure calculations. We identify the Weyl semimetal NbP for terahertz photodection with large current responsivity reaching ∼ 1A/W without external bias.

Nonlinear Hall Effects

“…According to theoretical calculations, large and tunable rectification can be achieved in graphene multilayers or transition metal dichalcogenides via the disorder-induced skew-scattering mechanism [81], which can be applied to low-power energy harvesters and terahertz detection [70,98,99] A method for broadband long-wavelength photodetection (Fig. 4 d) based on the Berry curvature dipole induced nonlinear Hall effect has also been proposed [97]. The Weyl semimetal NbP is identified as a good candidate for terahertz photodetection, with great current responsivity reaching ∼1A/W without external bias [97].…”

“…4 d) based on the Berry curvature dipole induced nonlinear Hall effect has also been proposed [97]. The Weyl semimetal NbP is identified as a good candidate for terahertz photodetection, with great current responsivity reaching ∼1A/W without external bias [97]. These exciting results on many fronts encourage the future development of terahertz/infrared technologies based on the nonlinear Hall effect.…”

“…b, Schematic of a dual-gate hexagonal boron nitride (h-BN)-capped WTe2 device, in which electrically driven stacking transitions can be realised to enable layer-parity selective memory behaviours of the Berry curvature and Berry curvature dipole with the nonlinear Hall effect.c, Metallic piezoelectric-like device based on the nonlinear Hall effect [65]. In the absence of strain, no nonlinear Hall effect exists.In the presence of a uniaxial strain, a charge current J(ω) leads to a finite nonlinear Hall voltage V (2ω) as a result of emerging D. d, Photodetection device based on the nonlinear Hall effect[70,97]. The oscillating terahertz (THz) field collected by the bowtie antenna induces a direct current in the transverse direction via an intrinsic or extrinsic second-order response of the device.…”

Nonlinear Hall effect with time-reversal symmetry: Theory and material realizations

“…New quantum technologies could directly make use of this effect. The quadratic transverse current-voltage characteristic could be in fact used to rectify 17 and detect terahertz radiation 18 directly. In addition, such Hall rectifiers would have a number of advantages including the simplicity of the device architecture that would facilitate integration on-chip and mass production.…”

Intrinsic nonlinear Hall effect in antiferromagnetic tetragonal CuMnAs

“…In addition, skew-scattering and side-jump arising from disorder e ects also contribute to the second order conductivity [5][6][7][8][9][10]. The NHE has been observed in several nonmagnetic systems recently [11][12][13][14][15][16], pointing to a promising route towards low-frequency current recti cation in metals [5,17].…”