Although there has been a focus on THz lters so far, there is a signifcant defciency in advancing low-temperature THz lters. According to the needs, we proposed a tunable THz lter that selectively permits the desired incident frequencies to be propagated in relevance with our purpose. The presence of a low-temperature nano superconductor and an undoped semiconductor layers in the proposed structure resulted in a multi-channel THz lter, which could be highly tuned with several parameters such as lattice constants, applied temperature, etc. The achieved transmittance spectra revealed that the emerged transmittance couples and stacks follow exact regulations. Furthermore, the structure exhibited omnidirectional band-gaps for both TE and TM polarized waves. Moreover, the use of a central defect layer gave some transmittance defect modes in
the forbidden areas. This structure could be used in some THz devices such as switches, optimized sensors as well as in space industry and telecommunications.