Terabit-per-square-inch data storage with the atomic force microscope

Cooper, E. B.; Manalis, Scott R.; Fang, Hongxia; Dai, Hongjie; Matsumoto, Kazuhiko; Minne, S. C.; Hunt, Thomas P.; Quate, C. F.

doi:10.1063/1.125390

Cited by 176 publications

(101 citation statements)

References 23 publications

(17 reference statements)

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“…The combination of those elements allows the fabrication of a wide range of electronic and mechanical devices with nanometer-scale features. [22][23][24][25][26][27][28][29] In some cases LON is used in combination with other methods such as photolithography, electron beam lithography or chemical wet etching to fabricate the desired device. In those cases, the critical or most relevant features of the device are fabricated by local oxidation.…”

Section: Local Oxidation Nanolithographymentioning

confidence: 99%

“…4a shows an array of dots with a lattice spacing 40 nm. If each dot is identify as '1' and the absence of dot as '0' the areal density of the pattern is 400 Gbits in 22 . By using single-wall carbon nanotube probes and Ti films, Quate and co-workers 22 in 1999 demonstrated an areal density of 1.6 Tbits in 22 .…”

Section: Memories Optical Microlens and Quantum Devicesmentioning

confidence: 99%

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Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

355

306

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The development of nanometer-scale lithographies is the focus of an intense research activity because progress on nanotechnology depends on the capability to fabricate, position and interconnect nanometer-scale structures. The unique imaging and manipulation properties of atomic force microscopes have prompted the emergence of several scanning probe-based nanolithographies. In this tutorial review we present the most promising probe-based nanolithographies that are based on the spatial confinement of a chemical reaction within a nanometer-size region of the sample surface. The potential of local chemical nanolithography in nanometer-scale science and technology is illustrated by describing a range of applications such as the fabrication of conjugated molecular wires, optical microlenses, complex quantum devices or tailored chemical surfaces for controlling biorecognition processes.

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Section: Local Oxidation Nanolithographymentioning

confidence: 99%

Section: Memories Optical Microlens and Quantum Devicesmentioning

confidence: 99%

Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

355

306

View full text Add to dashboard Cite

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“…The most efficient method was to combine pickup, pulse and push shortening all on a single substrate. Force calibration measurements were employed to establish the length of the nanotube tips using the method described by Cooper, et al 5 This approach was found to be suitable for both push and electrical pulse shortening techniques. Once a nanotube has been picked up and shortened, the probe can be used for high-resolution imaging, biomolecular manipulations or force spectroscopy.…”

Section: Shortening Afm Nanotube Tipsmentioning

confidence: 99%

Correlating AFM Probe Morphology to Image Resolution for Single-Wall Carbon Nanotube Tips

Wade

Shapiro

et al. 2004

Nano Lett.

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Methods we compared for attaching nanotubes to silicon AFM tips include manual assembly, direct growth and pickup.Smalley's group reported the first example of the use of carbon nanotubes as AFM tips in 1996. 1 They manually attached multi-wall carbon nanotubes (MWNT) and ropes of individual SWNTs to the apex of silicon pyramidal tips using tape adhesive and a micromanipulator in an optical microscope. The main drawback to this method is that MWNT tips large enough to be seen optically did not improve the resolution much beyond standard silicon tips when imaging isolated amyloid fibrils. 2 We found it fairly efficient to manually attach MWNTs to silicon AFM cantilevers with a 1000x optical microscope. In particular, the rate of assembly was quite high when a 15 V potential was applied between the silicon probe and the nanotubes. This resulted in nearly perfect and rapid alignment of the nanotube to the silicon tip. However, there was not a clear path to doing so with the thin SWNTs required for very high-resolution imaging.Lieber ,3,4 and Quate's 5 groups later showed that individual single wall carbon nanotubes could be directly grown by chemical vapor deposition (CVD) on the silicon tips themselves by first pre-coating the tip with a metal catalyst. In the CVD synthesis of carbon nanotubes, metal catalyst nanoparticles are heated in the presence of a hydrocarbon gas or carbon monoxide; the gas molecules dissociate on the catalyst surface and carbon is adsorbed into the particle. As the carbon precipitates, a carbon nanotube is grown with a diameter similar to that of the catalyst particle.Two techniques for direct growth have been reported. One involves creating nanopores at the apex of the silicon tip by etching with hydrofluoric acid. Catalyst particles are then deposited inside the nanopores. Carbon nanotubes grown via CVD from such a tip have an appropriate geometry for AFM imaging. While this approach enables fabrication of SWNT tips, the preparation of the porous layer in the silicon is time consuming and placement of the nanotube at the optimal location near the tip apex is

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“…Ferroelectrics are characterized by a reversible nonvolatile electric polarization, with significant interest for memory applications. Due to their small size, CNT can act as a probe and local electric field sources, 3,4 allowing nanoscale studies of ferroelectric domain nucleation and growth. In parallel, the ferroelectric polarization can potentially be used to modulate charge carrier density of the CNT.…”

mentioning

confidence: 99%

Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films

Paruch

Posadas

Dawber

et al. 2008

Applied Physics Letters

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We have directly grown single-walled carbon nanotubes on epitaxial BaTiO 3 thin films, fabricating prototype carbon nanotube-ferroelectric devices. We demonstrate polarization switching using the nanotube as a local electric field source and compare the results to switching with an atomic force microscopy tip. The observed variation of domain growth rates in the two cases agrees with the changes in electric field intensity at the ferroelectric surface. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2985815͔The small size and exceptional electrical properties of carbon nanotubes ͑CNTs͒ have made them the subject of intense research and promising candidates for device applications such as quantum wires, and nanoelectromechanical oscillators. 1,2 In fundamental and applied studies, conventional field-effect architecture has been widely used to modulate CNT charge carrier density and hence control their electronic properties. In such devices, SiO 2 remains the most common dielectric material.An alternative is a device combining CNT with a ferroelectric material ͑Fig. 1͒, allowing local control of domain structures in the ferroelectric film and potentially ferroelectric gating of the CNT. Ferroelectrics are characterized by a reversible nonvolatile electric polarization, with significant interest for memory applications. Due to their small size, CNT can act as a probe and local electric field sources, 3,4 allowing nanoscale studies of ferroelectric domain nucleation and growth. In parallel, the ferroelectric polarization can potentially be used to modulate charge carrier density of the CNT. Such ferroelectric field-effect doping has been demonstrated in superconducting and metallic oxides, 5,6 allowing local, reversible gating with a polarization of ϳ20-70 C / cm 2 , depending on the ferroelectric material used, and the interface quality.Here, we report on the fabrication and characterization of a prototype CNT-BaTiO 3 device with CNT grown directly on the epitaxial ferroelectric thin film. We demonstrate local control of the ferroelectric polarization using voltage pulses applied between the CNT and the conducting substrate, and compare the domain growth observed with that of atomic force microscopy ͑AFM͒-written nanoscale domains. We find that domain growth rates agree with the electric field modeled for each case. Finally, we observe a gate-voltagedependent "memory effect" during transport measurements, although this appears to be due to interaction with surface states rather than a ferroelectric field effect.To fabricate the devices, CNTs were synthesized on the ferroelectric surface by chemical vapor deposition ͑CVD͒ over Fe and Mo salts on Al 2 O 3 nanoparticles, 7 with Ti-Pt electrodes defined by subsequent photolithographic patterning and evaporation. The ferroelectrics were all tetragonal ͑001͒-oriented, epitaxial thin films grown by rf-magnetron sputtering on conducting Nb: SrTiO 3 substrates, allowing the polarization to be switched along the c-axis perpendicular to the plane of the film. Different...

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Terabit-per-square-inch data storage with the atomic force microscope

Cited by 176 publications

References 23 publications

Nano-chemistry and scanning probe nanolithographies

Nano-chemistry and scanning probe nanolithographies

Correlating AFM Probe Morphology to Image Resolution for Single-Wall Carbon Nanotube Tips

Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films

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