Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm

Yokouchi, N.; Yamanaka, N.; Iwai, Naoharu; Nakahira, Yusuke; Kasukawa, A.

doi:10.1109/3.544762

Cited by 19 publications

(15 citation statements)

References 26 publications

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“…5). These performances are comparable to standard compressive-strained GaInAsP/InP 1.3-mm-TE-lasers in agreement with previous publications [5][6][7]. Lasing at 5 kA/cm 2 is observed for devices with cavity length as low as 100 mm.…”

Section: Devices Performancessupporting

confidence: 92%

“…Indeed, the bulk lattice-matched ternary is emitted at about 1.66 mm. The change of composition required for a tensile strain and the quantum confinement induced in the QW leads to a strong decrease of the wavelength emission, typically down to 1.5 mm [7]. A good compromise to fabricate 1.55 mm TM lasers consists in growing relatively thick wells with the minimal tensile strain required for TM emission.…”

Section: Wavelength Extensionmentioning

confidence: 99%

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GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator

Lelarge

Dagens

Cuisin

et al. 2005

Journal of Crystal Growth

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Section: Devices Performancessupporting

confidence: 92%

Section: Wavelength Extensionmentioning

confidence: 99%

GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator

Lelarge

Dagens

Cuisin

et al. 2005

Journal of Crystal Growth

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“…The GaInNAsSb/GaAs value for dg/dn at 1.5µm is comparable to the value of 1.06x10 -15 cm 2 in GaInNAsSb/GaAs lasers at 1.26µm [31] and is significantly higher than the 5-7x10 -16 cm 2 and 2-8x10 -16 cm 2 for multiple quantum well (MQW) InGaAsP/InP lasers at 1.3µm [30] and 1.55µm [29]. At RT, n tr =2.1x10 18 cm -3 was measured and also calculated from the device band structure [22].…”

Section: Relative Intensity Noisementioning

confidence: 55%

High-performance GaInNAsSb/GaAs lasers at 1.5 um

Goddard

Bank

Wistey

et al. 2005

Novel in-Plane Semiconductor Lasers IV

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We achieved 1.5-µm CW SQW GaInNAsSb lasers with GaNAs barriers grown by MBE on GaAs substrates with typical room temperature threshold densities below 600A/cm 2 , external quantum efficiencies above 50%, and output powers exceeding 200mW from both facets for 20x1222µm devices tested epitaxial-side up. In pulsed mode, 450A/cm 2 , 50%, and 1100mW were realized. Longer devices yielded over 425mW of total CW power and thresholds below 450A/cm 2 . These results are comparable to high quality GaInNAs/GaAs lasers at 1.3µm. Z-parameter measurements revealed that these improvements in the performance metrics of approximately 40-60% over previous results are primarily due to reduced monomolecular recombination.The large differential gain of GaInNAsSb/GaNAs/GaAs lasers at 1.5µm of approximately 1.2x10 -15 cm 2 was mostly squandered in previous devices due to large quantities of monomolecular recombination. The characteristic temperatures for threshold current, T 0 , and for efficiency, T 1 , were 66K and 132K, respectively. These reduced values, compared to prior measurements of 106K and 208K, respectively, indicate carrier leakage. Since monomolecular recombination is temperature insensitive, the temperature stability of device operation was adversely affected.

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“…The T 1 value characterizing the efficiency drop was over 200 K. The high T 0 characteristic is a specificity of Al-based structure: although phosphorus-based tensile-strained laser emitting at 1.3 mm present a low transparency current density per well of 100 A/ cm 2 at room temperature, limitations occur when operation temperature increases with a characteristic temperature lower than 67 K [6].…”

Section: Laser Results and Discussionmentioning

confidence: 99%

“…Up to now, either unstrained or compressively strained QW lasers have been mainly studied. Nevertheless, theoretical studies predict superior characteristics of tensile-strained QW lasers, such as larger radiative recombination coefficient and higher differential gain as compared to compressive-strained QW lasers [4][5][6][7]. In tensile-strained QW lasers, transverse magnetic field (TM) mode gain is significantly enhanced and the peak gain is larger than that of the transverse electric field (TE) mode of compressively strained material.…”

Section: Introductionmentioning

confidence: 99%