2016
DOI: 10.1016/j.apsusc.2015.10.133
|View full text |Cite
|
Sign up to set email alerts
|

Temporal evolution of Ge surface topography under keV ion irradiation: Combined effects of curvature-dependent sputter erosion and atomic redistribution

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
21
0

Year Published

2017
2017
2022
2022

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 23 publications
(24 citation statements)
references
References 55 publications
3
21
0
Order By: Relevance
“…Numerical integrations of the PB equation of motion reveal that the cubic term can have a profound effect on the dynamics -it can lead to the formation of a terraced topography that coarsens with time, in accord with experimental observations [7][8][9][10][11][12][13][14][15][16][17][18][19][20]. The regions in which the surface slope changes rapidly are undercompressive shocks [22].…”
Section: Introductionsupporting
confidence: 52%
See 2 more Smart Citations
“…Numerical integrations of the PB equation of motion reveal that the cubic term can have a profound effect on the dynamics -it can lead to the formation of a terraced topography that coarsens with time, in accord with experimental observations [7][8][9][10][11][12][13][14][15][16][17][18][19][20]. The regions in which the surface slope changes rapidly are undercompressive shocks [22].…”
Section: Introductionsupporting
confidence: 52%
“…x and u x u 2 y in the EOM can yield surface morphologies that resemble those observed in various experiments. Among these are elongated pyramidal structures [8,20] and lenticular depressions [18]. We also compare the predictions from the 1D theory with our simulations in 2D when there is smoothing in the transverse direction and find that key predictions from 1D carry over to 2D.…”
Section: Terracing In Two Dimensionsmentioning
confidence: 69%
See 1 more Smart Citation
“…The ion irradiation-induced surface shows microstructures with similar feature sizes, well-defined vertical roughness, and lateral periodicity. Such characteristics have been observed in single element materials such as Si, Ag, Al, Cu, Pt, and Ge, 26 but have never been in SiC. The cause is the implantation of the incident ions, the cascading collision of the targeted atoms, the sputtering of the atoms, and the diffusion of the induced interstitials and vacancies, which modify and reorganize the surface microstructures.…”
Section: Surface Morphologymentioning
confidence: 99%
“…Ar) with a target (e.g. Ti6Al4V) and allows dynamical changes within the target (the incorporation of projectile atoms, atomic mixing as well as preferential sputtering) [55][56][57][58]. In addition, it does not have the drawbacks that existed in TRIM, such as wrong angular distribution of sputtered atoms for targets containing low atomic number (Z) elements with Z < 14 and overestimation of the high angle sputtering yield [59].…”
Section: Modelling With Sdtrimspmentioning
confidence: 99%