Temporal changes in absolute atom densities in H₂ and N₂ mixture gas plasmas by surface modifications of reactor wall

Abstract

Real time vacuum ultraviolet absorption spectroscopic (VUVAS) measurements revealed that temporal changes in absolute atom densities in H2 and N2 mixture gas (H2/N2) plasmas were affected by the conditions of the reactor inner wall-surface made of anodically-oxidized aluminum. Depending on preceding processes prior to the H2/N2 plasma process, N and H atom densities decreased for a nitrided wall surface, while no change occurred for a hydrogenated surface. Thus, the process history was revealed in the loss-properties of atoms on the reactor wall-surfaces. Suppressing the temporal variations in the gas-phase atom density is crucially important for realizing the precise control of the material processing with a high reproducibility.

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

“…26) As reported by Suzuki et al, it was demonstrated that these densities were maintained autonomously by a feedback controller system, even when chamber wall conditions were disturbed. 27,28) To apply a plasma etching process, etched featured profiles were tailored by lateral etching amount in a trend of processing time (Fig. 8).…”

Indoor Floor Heel Mark Removal Using Spark Discharges and Pressurized Airflow

“…To date, electrical discharge plasma technologies have been used in a variety of fields, such as food decontamination [2], plasma electrolysis, air purification, etching [3][4][5][6][7][8][9][10], semiconductor processes [11][12][13][14], and polymer film removal [15][16][17][18]. In our previous studies, non-equilibrium atmospheric pressure plasma was applied to glass surface cleaning [19,20], copper reduction [21], as well as silicon dioxide (SiO2) [22], and polymer etching [23].…”

Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system

“…Previously, our group reported that etching performance on organic materials depended greatly on their temperature. [10][11][12] This temporal behavior in the substrate temperature can be monitored by our developed temperature monitoring system, with a precision of 0.01 °C and a speed of 1 ms. 13) During plasma processing, the substrate temperature is rapidly increased by energetic ion bombardments and radiative heat-fluxes from the plasma. 14,15) To maintain the substrate at a set temperature, a temperature control system was constructed.…”

“…16) A temperature-controlled organic etching system with a dual-frequency type capacitively coupled plasma (CCP) reactor were used for the organic pattern etching and trimming processes. 11,12,17,18) H 2 and N 2 gas was supplied to the reactor at flow rates of 75 and 25 sccm, respectively, and the pressure in the reactor was maintained at 2 Pa. A power of 100 MHz for plasma excitation was supplied to the top electrode, and a power of 2 MHz for biasing was supplied to the bottom electrode, on which the 100 mm diameter Si substrate was chucked electrostatically.…”