Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectors

Si-based metal–semiconductor–metal photodetectors with various design modifications

“…Various MSM-PD designs using different compromises to reduce leakage dark current and enhance the responsivity of the devices have been reported in the literature. Kim and Hargis have reported the back illumination bandwidth which showed a decrease of about 50% compared to the top illumination condition [5,6], but it encounters several obstacles in practical applications due to its complicated and critical processes on both sides of the wafer. Ho and Wong have developed a vertical MSM-PD with trench electrodes, fabricated by using reactive ion etching (RIE) technology [7]; however, this sharp vertical trench structure would not let the top metal layer be uniformly deposited onto the trench Si surface.…”