2023
DOI: 10.1126/sciadv.adi1160
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Temporal and spatial tracking of ultrafast light-induced strain and polarization modulation in a ferroelectric thin film

Ruizhe Gu,
Vincent Juvé,
Claire Laulhé
et al.

Abstract: Ultrashort light pulses induce rapid deformations of crystalline lattices. In ferroelectrics, lattice deformations couple directly to the polarization, which opens the perspective to modulate the electric polarization on an ultrafast time scale. Here, we report on the temporal and spatial tracking of strain and polar modulation in a single-domain BiFeO 3 thin film by ultrashort light pulses. To map the light-induced deformation of the BiFeO 3 unit cell, we perfor… Show more

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“…The photovoltaic effect in ferroelectrics with a noncentrosymmetric crystal structure has been well investigated as a bulk photovoltaic effect (BPVE) that induces optical strains 11 15 by coupling with a converse piezoelectric effect. More recently, ultra-fast optical-induced strains and polarization modulations in (110)-oriented BiFeO 3 single-domain film by femto-second laser irradiation 16 . Thus, the characteristics and lattice distortions of ferroelectric semiconductors are deeply coupled via spontaneous polarization ( P s ), indicating that ferroelastic lattice distortion with P s vector rotation causes drastic modulation of the characteristics of ferroelectric semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…The photovoltaic effect in ferroelectrics with a noncentrosymmetric crystal structure has been well investigated as a bulk photovoltaic effect (BPVE) that induces optical strains 11 15 by coupling with a converse piezoelectric effect. More recently, ultra-fast optical-induced strains and polarization modulations in (110)-oriented BiFeO 3 single-domain film by femto-second laser irradiation 16 . Thus, the characteristics and lattice distortions of ferroelectric semiconductors are deeply coupled via spontaneous polarization ( P s ), indicating that ferroelastic lattice distortion with P s vector rotation causes drastic modulation of the characteristics of ferroelectric semiconductors.…”
Section: Introductionmentioning
confidence: 99%