Ta 3 N 5 can be a good candidate of oxygen evolution photocatalyst or a photoanode for Z-scheme device due to its n-type feature. In the present work, the formation energies and electronic structures of defects contained Ta 3 N 5 are studied by first principles density functional method in details. Our results show that the substitution of O for three-coordinated N in Ta 3 N 5 possesses low formation energy and introduces a shallow donor under both N-rich and N-poor conditions, making the most contribution to the n-type conductivity. By the optical transition levels, we show that the four-coordinated N vacancy in Ta 3 N 5 is responsible for the observed 720nm sub-band gap optical absorption. In addition, for alkali metal doped Ta 3 N 5 , our results reveal that the interstitial doping can lead to enhanced conductivity and reduced band gap, and the doping of Na and K in Ta 3 N 5 are expected to produce higher photocatalytic activity compared to Rb and Cs. These results are useful to understand the recent experimental observations and provide a guidance to engineer Ta 3 N 5 for improving photocatalytic efficiencies.The direct splitting of water into oxygen and hydrogen by semiconductor photocatalysts