The long-range order
of anisotropic phototropic Se–Te films
grown electrochemically at room temperature under uniform-intensity,
polarized, incoherent, near-IR illumination has been investigated
using crystalline (111)-oriented Si substrates doped degenerately
with either p- or n-type dopants. Fourier-transform (FT) analysis
was performed on large-area images obtained with a scanning electron
microscope, and peak shapes in the FT spectra were used to determine
the pattern fidelity in the deposited Se–Te films. Under nominally
identical illumination conditions, phototropic films grown on p+-Si(111) exhibited a higher degree of anisotropy and a more
well-defined pattern period than phototropic films grown on n+-Si(111). Similar differences in the phototropic Se–Te
deposit morphology and pattern fidelity on p+-Si versus
n+-Si were observed when the deposition rate and current
densities were controlled for by adjusting the deposition parameters
and illumination conditions. The doping-related effects of the Si
substrate on the pattern fidelity of the phototropic Se–Te
deposits are ascribable to an electrical effect produced by the different
interfacial junction energetics between Se–Te and p+-Si versus n+-Si that influences the dynamic behavior
during phototropic growth at the Se–Te/Si interface.