Template fabrication for the 32nm node and beyond

Schmid, Gerard M.; Thompson, Ecron; Stacey, Nick; Resnick, Douglas J.; Olynick, Deirdre L.; Anderson, Erik H.

doi:10.1016/j.mee.2007.01.038

Cited by 15 publications

(11 citation statements)

References 10 publications

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“…In UV-NIL, due to the lack of high imprint pressure, this equilibration needs to be either applied in the microregime with elastic stamps to compensate for small surface undulations 143,[155][156][157] or to be completely avoided with small hard stamps ͑made from fused silica͒, e.g., in SFIL. 158 Then the fluid acts as a shock absorber, which slows down the stamp/substrate closing velocity by squeeze flow and reduces the risk of breaking fragile structures upon contact with the substrate. Furthermore force and image sensors on the head prevent the stamp from being damaged by gross particles.…”

Section: Low-pressure Tools In Uv-nilmentioning

confidence: 99%

“…While in UV-imprint drastic improvements in the detection of contaminations have been made for the past few years, by improving substrate quality, 158 Obducat has solved the problem of contamination in a different way. 170 Instead of fabricating stamp copies in the same hard material as the original, intermediate polymer stamps are fabricated for every single imprint.…”

Section: Intermediate Stamps and Combined Thermal And Uv-nilmentioning

confidence: 99%

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Nanoimprint lithography: An old story in modern times? A review

Schift

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

676

442

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Nanoimprint lithography ͑NIL͒ is a high throughput, high-resolution parallel patterning method in which a surface pattern of a stamp is replicated into a material by mechanical contact and three dimensional material displacement. This can be done by shaping a liquid followed by a curing process for hardening, by variation of the thermomechanical properties of a film by heating and cooling, or by any other kind of shaping process using the difference in hardness of a mold and a moldable material. The local thickness contrast of the resulting thin molded film can be used as a means to pattern an underlying substrate on wafer level by standard pattern transfer methods, but also directly in applications where a bulk modified functional layer is needed. Therefore it is mainly aimed toward fields in which electron beam and high-end photolithography are costly and do not provide sufficient resolution at reasonable throughput. The aim of this review is to play between two poles: the need to establish standard processes and tools for research and industry, and the issues that make NIL a scientific endeavor. It is not the author's intention to duplicate the content of the reviews already published, but to look on the NIL process as a whole. The author will also address some issues, which are not covered by the other reviews, e.g., the origin of NIL and the misconceptions, which sometimes dominate the debate about problems of NIL, and guide the reader to issues, which are often forgotten or overlooked.

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Section: Low-pressure Tools In Uv-nilmentioning

confidence: 99%

Section: Intermediate Stamps and Combined Thermal And Uv-nilmentioning

confidence: 99%

Nanoimprint lithography: An old story in modern times? A review

Schift

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

676

442

View full text Add to dashboard Cite

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“…Thus, the generation of a defect-free master will be critical [77]. In addition to generating the pattern in resist, it must be transferred to the imprint master with tight control of size and roughness.…”

Section: (C) Nanoimprintmentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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“…The Navier-Stokes equations and continuous equation are numerically solved [2][3][4]. where ρ , η , g are the density, the viscosity, and the gravitational acceleration, respectively.…”

Section: Numerical Modelmentioning

confidence: 99%

UV-Nanoimprint Lithography (NIL) Process Simulation

Hirai

2010

J. Photopol. Sci. Technol.

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Template fabrication for the 32nm node and beyond

Cited by 15 publications

References 10 publications

Nanoimprint lithography: An old story in modern times? A review

Nanoimprint lithography: An old story in modern times? A review

Lithography for enabling advances in integrated circuits and devices

UV-Nanoimprint Lithography (NIL) Process Simulation

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