Template-directed selective growth of ordered ZnO nanostructures on GaN by the hydrothermal method

Zhou, Hai; Chen, A.; Jian, L. K.; Ooi, Kenta; Goh, Gregory K. L.; Zang, K. Y.; Chua, Soo Jin

doi:10.1016/j.jcrysgro.2008.04.047

Cited by 15 publications

(12 citation statements)

References 25 publications

(30 reference statements)

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“…Due to a small lattice mismatch, almost perfectly vertically aligned ZnO nanowire arrays can be grown on GaN (n-type [48] and p-type [145][146][147][148][149]), AlN, SiC, Al 2 O 3 , and MgAl 2 O 4 substrates [150], either by hydrothermal decomposition [151] or electrodeposition. In particular, ZnO and GaN have the same wurtzite-type structure with a low lattice mismatch of 1.8% [152], which is much smaller than that (12.7%) with Au(111).…”

Section: N-gan/p-ganmentioning

confidence: 99%

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One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: N-gan/p-ganmentioning

confidence: 99%

“…Electrons are accelerated by tens of kilovolts and have a wavelength on the order of Ångstroms, which gives a much higher resolution than conventional photolithography [274]. The growth mask can be a polymer resist, e.g., polymethyl methacrylate (PMMA), or any inert material, e.g., SiO 2 [146].…”

Section: Electron Beam Lithographymentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…Accordingly, one dimensional material such as ZnO nanowires (abbreviated as ZNs) is know to be one of the promising materials for application in the cold cathode emitter due to its structural property of high aspect ratio [2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19]. In addition, ZNs has advantages in the environmental issue since it has no toxicity, no limitation in the resource, and it could be synthesized by various processes including non vacuum processes such as solution based reaction techniques and ultrasonic spray pyrolysis, in which only relatively low energy is required for the growth process [20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38]. Up to now, several researches have been focusing on the development of cold cathode field emission devices based on ZNs [2,3,4,5,6,7,8,9,…”

Section: Introductionmentioning

confidence: 99%

Field emission property of ZnO nanowires prepared by ultrasonic spray pyrolysis

Htay

Hashimoto

2015

Superlattices and Microstructures

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The field emission property of cold cathode emitters utilizing the ZnO nanowires with various conditions prepared by ultrasonic spray pyrolysis technique was discussed. It is found that the emission current was enhanced in the emitters having higher aspect ratio as well as smaller sheet resistance. Applying of post-annealing process, utilization of additional Mo back electrode in the cathode, and coating of Mo on the ZnO nanowires resulted in the improvement of the emission current and lowering the threshold voltage. A threshold voltage of about 5.5 V/µm to obtain 1.0 µA/cm 2 was achieved in the sample prepared at the growth temperatures varying continuously from 250• C to 300• C.

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“…Patterning of ZnO using templates obtained by techniques such as anodic aluminum oxide (AAO) [3][4], nanosphere lithography [5], colloidal template assisted patterning [6][7], shadow mask [3,8], or NIL [9][10] processing provide an effective solution in this 34 direction. The templates then guide the patterning of ZnO fabricated through hydrothermal [11][12], MOCVD [13] or electrodeposition of zinc [14], and direct patterning of sol-gel precursors [9]. Patterning of well-defined ZnO nanoarrays by lithography with sub-100 nm spatial resolutions that combine multiple advantages of low-cost, high-throughput fabrication and compatibility with silicon technology have not been demonstrated before.…”

Section: Introductionmentioning

confidence: 99%

High Density Metal Oxide (ZnO) Nanopatterned Platforms for Electronic Applications

et al. 2013

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Fabrication methodologies with high precision and tenability for nanostructures of metal and metal oxides are widely explored for engineering devices such as solar cells, sensors, nonvolatile memories (NVM) etc. In this direction, metal and metal oxide nanopatterned arrays are the state-of-the-art platforms upon which the device structures are built where the tunable orderly arrangement of the nanostructures enhances the device performance. We describe here a coalition of fabrication protocols that employ block copolymer self-assembly and nanoimprint lithography (NIL) to obtain metal oxide nanopatterns with sub-100 nm spatial resolution. The protocols are easily scalable down to sub-50 nm and below.Nanopatterned arrays of ZnO created by using NIL assisted templates through area selective atomic layer deposition (ALD) and radio frequency (RF) sputtering find application in NVM and photovoltaics. We have employed NIL that produced nanoporous polymer templates using Si molds derived from block copolymer lithography (BCL) for pattern transfer into ZnO. The resulting ZnO nanoarrays were highly dense (8.6 x 10 9 nanofeatures per cm 2 ) exhibiting periodic feature to feature spacing and width that replicated the geometric attributes of the template. Such nanopatterns find application in NVM, where a change in the density and periodicity of the arrays influences the charge storage characteristics. The above assembly and patterning protocols were employed to fabricate metal-oxide-semiconductor (MOS) capacitor devices for investigating application in NVM. Patterned ZnO nanoarrays were used as charge storage centres for the MOS capacitor devices. Preliminary results upon investigating the flash memory performance showed good flat-band voltage hysteresis window at a relatively low operating voltage due to high charge trap density.

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Template-directed selective growth of ordered ZnO nanostructures on GaN by the hydrothermal method

Cited by 15 publications

References 25 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Field emission property of ZnO nanowires prepared by ultrasonic spray pyrolysis

High Density Metal Oxide (ZnO) Nanopatterned Platforms for Electronic Applications

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