Template assisted electrodeposition of germanium and silicon nanowires in an ionic liquid

Abstract

In this paper we report for the first time on the room temperature template synthesis of germanium and silicon nanowires by potentiostatic electrochemical deposition from the air- and water stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py(1,4)]Tf(2)N) containing GeCl(4) and SiCl(4) as a Ge and Si source, respectively. Commercially-available track-etched polycarbonate membranes (PC) with an average nominal pore diameter of 90-400 nm were used as templates. Ge and Si nanowires with an average diameter corresponding to the nanopores' diameter and lengths of a few micrometres were reproducibly obtained. Structural characterization of the nanowires was performed by EDX, TEM, HR-SEM and Raman spectroscopy. Despite the rough surface of the nanowires, governed mostly by the original shape of the nanopore's wall of the commercially-available PC membrane, preliminary structural characterizations demonstrate the promising prospective of this innovative elaboration process compared to constraining high vacuum and high temperature methods.

Влияние температуры электролита на процесс катодного осаждения нитевидных наноструктур Ge из водных растворов на частицах In и Sn

“…Избежать вза-имодействия кристаллизующегося Ge с H 2 O можно за счет использования ионных жидкостей [8] или расплавов солей германия [9]. Однако для формирования массивов наноструктур Ge из неводных электролитов необходи-мо использование поликарбонатных мембран [10], либо самоупорядоченных пористых матриц, например, оксида алюминия [11]. Более того, сформированные нанострук-туры Ge из неводных электролитов имеют аморфную структуру, поэтому после их формирования необходима термическая обработка, что также усложняет технологи-ческий процесс и ограничивает условия их применения.…”

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

“…A less extensive examination of a possible crystallization during heat treatment, without the effort of HR TEM investigations, is Raman spectroscopy [30]. This non destructive characterization method allows a fast investigation of the Raman crystallinity.…”

“…Complementary and an other proof of the non crystallinity is Raman spectroscopy (30).1nvesti gations are carried out using the same -150 nm thick RFS deposited amorphous layers investigated by AfM analysis in Section 333. Fig.…”

“…Raman investigation allows determining the presence of amorphous (a Si), microcrystalline (μ Si), and crystalline silicon (c Si) on the base of corresponding vibration modes of the Raman shift [3,30]. The uniform bond structure and the limited density of states of c Si yield a sharp Raman band width of the TO phonon band with a center of 521 cm −1 [31].…”

Electrochemical Formation of Germanene: pH 4.5

“…36,[41][42][43][44][45][46] Ge electroplating has also been reported on semiconducting substrates such as Si. 47 There are some reports on the formation of thick Ge nanostructures, [48][49][50] which showed that, depending on potential, Ge nanostructures can be grown from aqueous solution by dissolution into and saturation of a liquid Hg electrode.…”