Temperature-Variable Characteristics and Noise in Metal--Semiconductor Junctions

Modeling of Schottky barrier diode millimeter-wave multipliers at cryogenic temperatures

“…2, that our developed SDD model predicts the measured characteristic at 300 K. To predict the performance at cryogenic temperatures, representative values for the remaining model parameters are assumed. From the I-V characteristic at 77 K it is seen that the current level for a given voltage is lower and the slope is steeper than at 300 K in accordance with observations found in the literature [5]- [6]. III.…”

“…The maximum current is related to the resistance of the epi-layer which drops to a low value at cryogenic temperatures. Interestingly, the temperature dependence of the velocity saturation effect as described in [6] is shown to be of less importance for the considered millimeter-wave frequency doubler.…”

“…Physically, the I-V characteristic described by equations (1), (2) and (3) connects the limiting cases of current transport at very low temperatures where tunneling through the barrier dominates, with thermionic emission that dominates at temperatures above approximately 100 K [6]. The slope parameter is introduced in a way as to take into account of contributions from transport mechanisms other than thermionic emission also at higher temperatures.…”

“…It is interesting to note that for a given semiconductor material, the only two unknown parameters determining the temperature dependence of the I-V characteristic are the barrier height and doping of the epi-layer. The leading factor, α, in equation (3), however, models an effective epilayer doping which is experimentally observed to be higher than the nominal N d [6]. The representation of (1) as implemented in the SDD model is…”

A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors

“…where η(T nom ) is the ideality factor extracted at T nom . The expression for the forward I-V characteristic in (7) remains valid for the triple-anode varactor diode stack only up to the so-called flat-band condition [18]. The flat-band condition is given as V fb = V bi − V j = 3 × kT /q where the built-in potential has been introduced.…”