Temperature Stress Response of Germanium MOS Vapacitors with HfO2/HfSiON Gate Dielectric

Abstract

Temperature and electrical stress-induced degradation in germanium substrate MOS capacitors with HfO 2 /HfSiON gate dielectrics is reported. The accumulation capacitance decreases with temperature stress due to diffusion of germanium into the high-dielectric. The interface trap and border trap densities decrease due to oxide growth at the oxide-germanium interface.