Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride

Abstract

<jats:title>Abstract</jats:title> <jats:p>Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on the atomic layer deposited AlN/SiO<jats:sub>2</jats:sub>/Si substrate is demonstrated. Electrical measurement results show that BP FETs on the AlN substrate possess superior electrical performance compared with those fabricated on the conventional SiO<jats:sub>2</jats:sub>/Si substrate. It exhibits a large on-off current ratio of 5 × 10<jats:sup>8</jats:sup>, a low subthreshold swing of &lt;0.26 V/dec, and a high normalized field-effect carrier mobility of 1071 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> in the temperature range from 77 to 400 K. However, these stable electrical performances are not found in the BP FETs on SiO<jats:sub>2</jats:sub>/Si substrate when the temperature increases up to 400 K; instead, the electrical performance of BP FETs on the SiO<jats:sub>2</jats:sub>/Si substrate degrades drastically. Furthermore, to gain a physical understanding on the stable performance of BP FETs on the AlN substrate, low-frequency noise analysis was performed, and it revealed that the AlN film plays a significant role in suppressing the lattice scattering and charge trapping effects at high temperatures.</jats:p>

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

“…The results are consistent with the reported literature. 27,50 The decreasing mobility follows a power law, μ ∼ T − α , where the exponent α depends on the dominant scattering mechanism, see Fig. 4f.…”

“…The recorded exponent α ≈ 6–7 is consistent with the reported value for the explored range of temperatures. 50…”

“…The recorded exponent a E 6-7 is consistent with the reported value for the explored range of temperatures. 50 In Fig. 5a, the memory response of the device in a SET/ READ/RESET/READ sequence is depicted across various temperatures, at V ds = 100 mV and 2 mbar pressure.…”