Temperature stability of the refractive index and the direct bandedge in TlInGaAs quaternary alloys

Abstract

TlInGaAs quaternary alloy layers were grown on InP substrates by gas-source molecular-beam epitaxy. Refractive index dispersions were determined at the temperature range of 300–340 K in the photon-energy region below and a little above the direct bandedge E0 by the optical reflectance measurements. The temperature dependence of the refractive index was analyzed with the first-order Sellmeier equation. The temperature dependence of the E0 edge was also determined by the absorption measurements. It was found that the temperature coefficients of both refractive index and E0 edge of TlInGaAs are much smaller than those for InGaAs. These results facilitate the fabrication of the temperature-stable-wavelength optoelectronic devices using this alloy system.

MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength

“…The use of the smaller temperature-dependent refractive-index cladding layer is effective in obtaining the small temperature-dependent wavelength LDs. We consider that the addition of Tl into InP cladding layer will result in the reduced temperature variation of refractive index of TlInP, as already confirmed for the TlInGaAs [6]. Although the exact lattice constant of TlP is not known because of the difficulty in the growth of TlP, the lattice constant of TlP is calculated to be very close to that of InP [7].…”

Optical properties of TlInGaAs/TlInP/InP laser diodes

“…The use of the smaller temperature-dependent refractive-index cladding layer is effective to obtain the temperature stable wavelength LDs. We consider that the addition of Tl into InP cladding layer will result in the reduced temperature variation of refractive index for the TlInP, as already www.pss-a.com confirmed for the TlInGaAs [6]. It is also expected that the refractive index for the TlInP is larger than that of InP, so the TlInGaAs/TlInP/InP heterostructure will form the separate-confinement heterostructure (SCH).…”

Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

“…Successful growth of TlInGaAs on InP substrate (in small Tl composition region) and the observation of the small temperature-variation of the photoluminescence (PL) [3] and electroluminescence (EL) [4] peak energies for the TlInGaAs/InP double heterostructures have been already reported. We have also observed the small temperaturevariation of the longitudinal mode wavelengths of the TlInGaAs/InP LDs under pulsed current laser operation [5] as well as the temperature-stable refractive-index for TlInGaAs [6].…”