Temperature sensor based on 4H-SiC diodes for hostile environments

Rao, Sandro; Pangallo, Giovanni; Corte, Francesco G. Della; Nipoti, Roberta

doi:10.1109/aisem.2015.7066771

Cited by 1 publication

(1 citation statement)

References 8 publications

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“…The Complementary Metal Oxide Semiconductor (CMOS) based thermal detector has been widely used because of the low power sensor characteristic. There are other different types of temperature sensors such as the Bipolar Junction Transistor (BJT) [7][8][9], graphene-based Field Effect Transistor (GFET) temperature sensor [10], resistor-based thermal sensor [11], and diode based temperature sensor [12][13]. In this project, the CMOS-based temperature sensor was selected because it consumes less power as compared to other types of temperature sensor.…”

Section: Introductionmentioning

confidence: 99%

CMOS based thermal detector for processor

Yang

Jubadi

2020

IJEECS

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<p>This project proposed a design of low power CMOS-based thermal detector which can detect the temperature of processor such as in Central Processing Unit. By re-designing temperature detector circuit using CMOS technology, the reduction in power consumption and area size of the thermal detector can be obtained. In this paper, the design of thermal detector consists of temperature sensing core, amplifier, and Analog to Digital Converter (ADC), respectively. The sensor was designed using 0.13 µm CMOS technology and operates by sensing the temperature of processor and produced a digital output value. The temperature detection range was setup between 0 °C to 80 °C with 10 °C resolution. The temperature detector was capable to show temperature readings in binary value. It consumed an average power of 558.2 µW and a space occupancy of 0.0118 mm².</p>

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