Temperature rising effect of 193-nm chemically amplified resist during postexposure bake

Lee, Young-Mi; Sung, Moon-Gyu; Lee, Eun-Mi; Sohn, Young-Soo; Bak, Heung-Jin; Oh, Hye−Keun

doi:10.1117/12.388263

Cited by 9 publications

(4 citation statements)

References 7 publications

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“…It tells us that the transient heating period provides the strongest correlation with the resulting CD data, supporting previous research claiming that this segment of the bake cycle may be critical to future control efforts. 3,4 It also shows that when the bake plate does not correct for systematic thermal variations, the correlation between temperature and CD profiles will remain strong throughout the bake cycle, reinforcing the thermal fingerprint in the CD map during the entire bake step. Although the across-wafer temperature range decreases throughout the bake step (Fig.…”

Section: Single-zone Bake Plate 193nm Lithography Processmentioning

confidence: 86%

Time-based PEB adjustment for optimizing CD distributions

Friedberg

Tang

Singh

et al. 2004

Metrology, Inspection, and Process Control for Microlithography XVIII

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In this paper we investigate the impact of bake plate temperature variability throughout the entire bake trajectory on resulting critical dimension. For a poorly-controlled bake plate, it is found that the correlation between the temperature profile and CD distribution is high throughout the entire bake cycle, including the steady state sector. However, for a well-controlled, multiple-zone bake plate, the correlation is only significant during the transient heating sector, since in those cases the steady state plate behavior has already been optimized for CDU performance. An estimate of the potential improvement yet to be gained by improvement of transient heating uniformity is calculated.

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Section: Single-zone Bake Plate 193nm Lithography Processmentioning

confidence: 86%

Time-based PEB adjustment for optimizing CD distributions

Friedberg

Tang

Singh

et al. 2004

Metrology, Inspection, and Process Control for Microlithography XVIII

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“…Intra-wafer variation primarily occurs due to wafer-level non-uniformities such as Post Exposure Bake (PEB), to temperature gradient [2] and to resist thickness variation [3]. Intra-field variation, on the other hand, stems from optical sources such as focus variations across the field, dose variation [4] and mask errors [5].…”

Section: B Analysis Methodologymentioning

confidence: 99%

Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory

Agharben¹,

Roussy²,

Bocquet

et al. 2015

2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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In this paper a correlation between specific inline and electrical parameters has been deeply investigated. This study shows the impact of the flash gate intra-die and intra-wafer spread on the memory performances. A process recipe optimization has been evaluated to recover the effects of these variations. This optimization allows us to reduce the written threshold voltage intra-wafer spread by fifty percent.

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“…Incorporation of the rise and cool dynamic temperature segments of the PEB treatment improves the modeling of 193nm line widths 4 Direct measurement of the wafer in the PEB system is a reliable way to acquire thermal information about the temperature profile. Knowledge of the temperature profile can then be used to reduce the contributions to the critical dimension variation.…”

Section: Introductionmentioning

confidence: 99%

Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure bake process

Cohen¹,

Renken²,

Miller³

2002

SPIE Proceedings

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A system for monitoring the dynamic temperature profile during the deep UV (DUV) post exposure bake (PEB) is described. Platinum resistor temperature detectors (RTDs) are embedded into silicon wafers. Hardware and software convert the resistances to temperatures. The RTD calibration is National Institute of Standards and Technology (NIST) traceable. The wafers are tested on both a thermally uniform hot plate and a production PEB chamber. The temperature profiles for the PEB are fitted to a heat transfer model allowing heating and cooling time constants to be determined. High accuracy and precision are demonstrated.

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Temperature rising effect of 193-nm chemically amplified resist during postexposure bake

Cited by 9 publications

References 7 publications

Time-based PEB adjustment for optimizing CD distributions

Time-based PEB adjustment for optimizing CD distributions

Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory

Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure bake process

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