Temperature range for re-emission of carriers in GaAs/Ga1−Al As superlattices

Kraı̈em, S.; Hassen, F.; Sfaxi, L.; Maâref, H.

doi:10.1016/s0026-2692(99)00011-7

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Thus we are able to conclude that the decrease of the intensity of the SL is therefore attributed to thermal re-emission of the confined heavy-hole and electron out of the SL. These results are very similar to those previously reported by Jahn et al [9] and to our previous work [10].…”

Section: Indirect Excitationsupporting

confidence: 94%

“…On the other hand, recent experiments [9,10] have studied the temperature dependence of the cathodoluminescence (CL), and the PL from GaAs-Al x Ga 1−x As multiple QWs and superlattice (SL) structures containing a wider QW in the centre of the structure. The decrease of the integrated intensity has been attributed to thermal re-emission of the carriers out of the QW.…”

Section: Introductionmentioning

confidence: 99%

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Influence of excitation energy on carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice

Kraı̈em

Hassen

Maâref

et al. 2000

Semicond. Sci. Technol.

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The efficiency of carrier collection into the active region in GaAs-Al x Ga 1−x As quantum well structures is of considerable interest for the development of heterostructure lasers which should operate at room temperature. In order to gain access to a quantitative understanding of the capture and of the emission processes in these structures, we report an experimental study of the photoluminescence (PL) properties, after both picosecond and continuous-wave laser excitation, of a GaAs-Al 0.46 Ga 0.54 As superlattice (SL) heterostructure grown by molecular beam epitaxy. We show that the temperature dependence of the integrated PL intensity observed under both direct and indirect excitation in this SL containing a thicker quantum well in the structure centre, reveals much information about the mechanism of carrier emission processes.

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Section: Indirect Excitationsupporting

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Influence of excitation energy on carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice

Kraı̈em

Hassen

Maâref

et al. 2000

Semicond. Sci. Technol.

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A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1−xMnxO thin films grown on c-Al2O3

Lin

et al. 2009

Journal of Applied Physics

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We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Γ7c-Γ7vu), FXB (Γ7c-Γ9v), and FXC (Γ7c-Γ7vl) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.

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Temperature range for re-emission of carriers in GaAs/Ga1−Al As superlattices

Cited by 2 publications

References 6 publications

Influence of excitation energy on carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice

Influence of excitation energy on carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice

A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1−xMnxO thin films grown on c-Al2O3

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Temperature range for re-emission of carriers in GaAs/Ga1−Al As superlattices

Cited by 2 publications

References 6 publications

Influence of excitation energy on carrier dynamics in GaAs-Al0.46Ga0.54As superlattice

Influence of excitation energy on carrier dynamics in GaAs-Al0.46Ga0.54As superlattice

A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1−xMnxO thin films grown on c-Al2O3

Contact Info

Product

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Influence of excitation energy on carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice

Influence of excitation energy on carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice