Temperature measurement using silicon piezoresistive MEMS pressure sensors

Frantlović, Miloš; Jokić, Ivana; Lazio, Z.; Vukelić, Branko; Obradov, Marko; Radović, Dana Vasiljević

doi:10.1109/miel.2014.6842110

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…Nevertheless, their changing trends are similar in terms of the temperature response. Based on the real measured data, as shown in figure 10(b), the calibration function and a lower than ±0.91 • C measurement error are generally obtained that is defined by the polynomial fitting method [40]. According to formulas ( 7) and ( 8), it can be calculated that TCR is −0.150% • C −1 and temperature sensitivity (S T ) is −1.225 mV/(V • C) in the range from −20 • C to 100 • C, which are consistent with the theoretical results.…”

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

Development of MEMS composite sensor with temperature compensation for tire pressure monitoring system

Zhang

Wang

Xie

et al. 2021

J. Micromech. Microeng.

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The pressure and temperature inside the tire is mainly monitored by the tire pressure monitoring system (TPMS). In order to improve the integration of the TPMS system, moreover enhance the sensitivity and temperature-insensitivity of pressure measurement, this paper proposes a microelectromechanical (MEMS) chip-level sensor based on stress-sensitive aluminum–silicon hybrid structures with amplified piezoresistive effect and temperature-dependent aluminum–silicon hybrid structures for hardware and software temperature compensations. Two types of aluminum–silicon hybrid structures are located inside and outside the strained membrane to simultaneously realize the measurement of pressure and temperature. The model of this composite sensor chip is firstly designed and verified for its effectiveness by using finite element numerical simulation, and then it is fabricated based on the standard MEMS process. The experiments indicate that the pressure sensitivity of the sensor is between 0.126 mV/(V·kPa) and 0.151 mV/(V·kPa) during the ambient temperature ranges from −20 °C to 100 °C, while the measurement error, sensitivity and temperature coefficient of temperature-dependent hybrid structures are individually ±0.91 °C, −1.225 mV/(V °C) and −0.150% °C−1. The thermal coefficient of offset (TCO) of pressure measurement can be reduced from −3.553%FS °C−1 to −0.375%FS °C−1 based on the differential output of the proposed sensor. In order to obtain the better performance of temperature compensation, Elman neural network based on ant colony algorithm is applied in the data fusion of differential output to further eliminate the temperature drift error. Based on which, the overall measured error is within 3.45 kPa, which is less than ±1.15%FS. The TCO is −0.017%FS °C−1, and the thermal coefficient of span is −0.020%FS °C−1. The research results may provide a useful reference for the development of the high-performance MEMS composite sensor for the TPMS system.

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Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

Development of MEMS composite sensor with temperature compensation for tire pressure monitoring system

Zhang

Wang

Xie

et al. 2021

J. Micromech. Microeng.

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show abstract

“…They dominate in automotive industry (the largest market share of pressure sensors today), and are very common in process industry, aerospace and military industry, medical equipment and consumer products. As a result of continuous research and development of silicon piezoresistive MEMS pressure sensors during the last 3 decades at the Center of Microelectronic Technologies of the Institute of Chemistry, Technology and Metallurgy, University of Belgrade, a variety of products, including sensors and industrial instruments based on them, has been realized and brought to market (Djurić et al, 1986;Matović et al, 1991;Djurić, 1995;Frantlović et al, 2007;Smiljanić et al, 2007;Frantlović et al, 2009;Smiljanić et al, 2012;Frantlović et al, 2014).…”

Section: Introductionmentioning

confidence: 99%

Intelligent Industrial Instrumentation Based on Silicon Mems Pressure Sensors

Frantlović

Jokić²,

Jakovljević³

2016

Proceedings of the International Scientific Conference - Sinteza 2016

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Research and development in the fields of MEMS sensors and intelligent industrial instrumentation, performed at the Center of Microelectronic Technologies (ICTM-CMT), have resulted in scientific and technological advances beyond the state-of-the-art. In this paper, we give an introduction to MEMS sensors, as well as to the concept of intelligent industrial instrumentation. The SP-12 silicon piezoresistive MEMS pressure sensor, the newest type developed and manufactured at ICTM, is described in detail. Subsequently, a new method is presented that enables simultaneous highperformance pressure and temperature measurement to be performed using a single piezoresistive MEMS pressure sensor. It is devised using the sensor's mathematical model, based on sensor characterization data. A newly developed intelligent industrial transmitter was used as a hardware platform for experimental validation of the measurement method. The obtained results indicate that the measurement performance level of the existing industrial equipment can be met or exceeded using the described approach. Implications regarding the practical use of the presented method are discussed. Finally, two intelligent industrial instruments based on the SP-12 sensor and the described method are presented: a pressure transmitter and a liquid level transmitter. The performance and reliability of both products have been proven in harsh industrial environments.

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“…Some early results of our work were presented in Ref. [1], while this paper contains more comprehensive information based on measurement data obtained for a new set of sensors.…”

Section: Introductionmentioning

confidence: 99%

Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications

Frantlović¹,

Jokić²,

Lazić³

et al. 2015

FACTA U EE

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Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved.

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Temperature measurement using silicon piezoresistive MEMS pressure sensors

Cited by 8 publications

References 2 publications

Development of MEMS composite sensor with temperature compensation for tire pressure monitoring system

Development of MEMS composite sensor with temperature compensation for tire pressure monitoring system

Intelligent Industrial Instrumentation Based on Silicon Mems Pressure Sensors

Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications

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