Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

Abstract

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 °C. The previously observed maximum drift of ± 10 mV of the reference offset voltage at 600 °C was reduced to within ± 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 o C.