Temperature-induced valence transition in EuNi2(Si1–Ge )2 investigated by high-energy resolution fluorescence detection X-ray absorption spectroscopy

Shimokasa, Ryohei; Kawamura, N.; Matsumoto, Takayuki; Kawakami, Koki; Taku, Kawabata; Isumi, Gen; Uozumi, Takayuki; Mitsuda, Akihiro; Wada, Hirofumi; Mizumaki, Masaichiro; Mimura, Koji

doi:10.1016/j.radphyschem.2019.02.009

Cited by 7 publications

(2 citation statements)

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“…In contrast, S 2 , S 3 , and S 4 , accompanying peak B, appear at temperatures below T v . Our previous report on the HERFD-XAS experiments for EuNi 2 (Si 1-x Ge x ) 2 has also mentioned the existence of additional fine structures in the spectra [18]. The S 4 spectral intensity of Eu(Rh 1-…”

Section: Resultsmentioning

confidence: 89%

Electronic Structure of the Valence Transition System Eu(Rh₁₋_xT_x)₂Si₂ (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Shimokasa

Kawamura

Taku

et al. 2020

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019)

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The electronic structure of Eu(Rh 1-x T x) 2 Si 2 (T = Co, Ir) showing a valence change with temperature has been investigated by means of high-energy resolution fluorescence detection X-ray absorption spectroscopy (HERFD-XAS). The Eu L 3-edge HERFD-XAS spectra for Eu(Rh 1-x T x) 2 Si 2 distinctly demonstrate that, due to the improvement of the energy resolution, the intensities of Eu 2+ and Eu 3+ components are dependent on temperature. Each component has additional fine structures, which clearly change above and below the transition temperature. These spectral changes are similar to those for EuNi 2 (Si 1-x Ge x) 2 , but the degree of temperature dependence on energy difference between Eu 2+ and Eu 3+ components is different from EuNi 2 (Si 1-x Ge x) 2. The results of this study suggest that a treatment of the many-body interaction is essential to understanding the valence transition of Eu compounds.

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Section: Resultsmentioning

confidence: 89%

Electronic Structure of the Valence Transition System Eu(Rh₁₋_xT_x)₂Si₂ (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Shimokasa

Kawamura

Taku

et al. 2020

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019)

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“…Recently, there have been remarkable advances in using in situ and operand techniques, which enable real-time observation of surface reactions on catalysts and battery electrodes. It is now possible to obtain high-resolution XAFS spectra free from the core-hole lifetime broadening by detecting monochromatized fluorescence [84].…”

Section: G Development Of Surface and Interface Science Using Hard X-...mentioning

confidence: 99%

Progress of Surface and Interface Science Using Synchrotron Radiation

Kinoshita

2023

e-J. Surf. Sci. Nanotechnol.

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4f electron temperature driven ultrafast electron localization

Yamagami,

Ueda,

Staub

et al. 2024

Phys. Rev. Research

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Temperature-induced valence transition in EuNi2(Si1–Ge )2 investigated by high-energy resolution fluorescence detection X-ray absorption spectroscopy

Cited by 7 publications

References 25 publications

Electronic Structure of the Valence Transition System Eu(Rh₁₋_xT_x)₂Si₂ (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Electronic Structure of the Valence Transition System Eu(Rh₁₋_xT_x)₂Si₂ (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Progress of Surface and Interface Science Using Synchrotron Radiation

4f electron temperature driven ultrafast electron localization

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Temperature-induced valence transition in EuNi2(Si1–Ge )2 investigated by high-energy resolution fluorescence detection X-ray absorption spectroscopy

Cited by 7 publications

References 25 publications

Electronic Structure of the Valence Transition System Eu(Rh1−xTx)2Si2 (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Electronic Structure of the Valence Transition System Eu(Rh1−xTx)2Si2 (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Progress of Surface and Interface Science Using Synchrotron Radiation

4f electron temperature driven ultrafast electron localization

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Electronic Structure of the Valence Transition System Eu(Rh₁₋_xT_x)₂Si₂ (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy

Electronic Structure of the Valence Transition System Eu(Rh₁₋_xT_x)₂Si₂ (T = Co, Ir) Studied by High-Energy Resolution Fluorescence Detection X-Ray Absorption Spectroscopy