Temperature-induced ion kinetic energy relaxation and yield of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">−</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>dissociative electron attachment from hydrogenated diamond films

Hoffman, A.; Ustaze, S.; Hamou, M. Hadj; Hedhili, Mohamed N.; Coat, Y. Le; Azria, R.; Tronc, M.

doi:10.1103/physrevb.63.245404

Cited by 6 publications

(1 citation statement)

References 23 publications

(31 reference statements)

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“…This observed decay was associated with the ESD of hydrogen that induces an increase in the electron affinity. Indeed, the yield of the ESD of hydrogen decreases when the temperature increases [17]. In contrast to Stacey et al's [5] experiments where continuous irradiation is used, in our experiments, the incident e-fluence was kept very low thanks to the use of short duration electron pulses.…”

Section: Discussionmentioning

confidence: 80%

The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond

Belhaj¹,

Tondu²,

Inguimbert³

et al. 2010

J. Phys. D: Appl. Phys.

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The effects of temperature and incident electron current density on the total electron emission yield (TEEY) of polycrystalline diamond deposited by the chemical vapour deposition technique (CVD) were investigated at low electron beam fluence. It was found that the TEEY reversibly increases with the temperature and reversibly decreases with the current density. This behaviour is explained on the basis of a dynamic competition between the accumulation of holes (positive space charge), which internally reduces the secondary electron emission, and the thermally activated conductivity that tends to reduce the space charge formation.

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Section: Discussionmentioning

confidence: 80%

The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond

Belhaj¹,

Tondu²,

Inguimbert³

et al. 2010

J. Phys. D: Appl. Phys.

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An Insight into Grain Refinement Mechanism of Ultrananocrystalline Diamond Films Obtained by Direct Current Plasma-Assisted Chemical Vapor Deposition

Lee

Cho

Kim

et al. 2014

Plasma Process. Polym.

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The grain-refinement mechanisms involved during the deposition of diamond films by directcurrent plasma assisted chemical vapor deposition (DC-PACVD) were investigated as a function of the inter-electrode electric field (IEEF). As IEEF was increased from 260 to 940 V cm À1 , the local electron temperatures near the growth front increased strongly; as a result, a strong grain refinement occurred ultimately yielding ultrananocrystalline diamond films (UNCD). Such observations were attributed to novel features of the DC-PACVD, including the electron-stimulated desorption (ESD) of the hydrogen-terminated moieties located at the surface, and the consequently enhanced generation of bi-radical sites at the growing diamond surface.

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Decay of secondary electron emission and charging of hydrogenated and hydrogen-free diamond film surfaces induced by low energy electrons

Hoffman

Laikhtman

Ustaze

et al. 2002

Journal of Applied Physics

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In this work, the decay of secondary-electron emission (SEE) intensity and charging of hydrogenated and hydrogen-free diamond film surfaces subjected to incident electron irradiation at energies between 5 and 20 eV are investigated. Electron emission curves as a function of incident electron energy were measured. For the hydrogenated films, it was found that the SEE intensity decays in intensity under continuous electron irradiation, albeit maintains a nearly constant onset. The decay in time of the SEE intensity was measured for various incident electron energies. From these measurements, the SEE intensity decay rate from the hydrogenated diamond surface was calculated as a function of incident electron energy and found to display a broad peak at ∼9 eV. The decay of the SEE intensity is explained as due to electron trapping in the near-surface region of the hydrogenated diamond films resulting in the formation of a depletion layer and upward surface band bending while overall charge neutrality is maintained. It is suggested that the mechanism of charge trapping is by resonant electron attachment of incident electrons into C–H (ads) bonds present within the near-surface region of the hydrogenated diamond films which displays a similar dependence on incident electron energy. Upward band bending results in a surface potential barrier to secondary electrons created within the solid. For the hydrogen-free diamond surface, decay in intensity and a positive shift in the onset of the SEE were observed for all incident electron energies and currents used. It was found that surface charging increases monotonically with incident electron energy. In this case, charging is associated with electron trapping into localized surface states of π* symmetry. These electronic states are associated with surface reconstruction resulting from hydrogen desorption.

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Temperature-induced ion kinetic energy relaxation and yield ofH−dissociative electron attachment from hydrogenated diamond films

Cited by 6 publications

References 23 publications

The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond

The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond

An Insight into Grain Refinement Mechanism of Ultrananocrystalline Diamond Films Obtained by Direct Current Plasma-Assisted Chemical Vapor Deposition

Decay of secondary electron emission and charging of hydrogenated and hydrogen-free diamond film surfaces induced by low energy electrons

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