Temperature‐Induced Changes in Multifin‐Schottky Barrier FinFETs: An Analog/RF Linearity Investigation

Abstract

In this script, a Gallium Nitride (GaN)‐based FinFET structure is proposed with a multi‐channel device that is designed and simulated. Here, the 3D‐Sentaures TCAD simulator is used to investigate the analog/radio frequency performance and linearity of the MultiFin‐Schottky Barrier FinFET with different temperatures of 100–400 K. The proposed device underwent a temperature analysis, where critical parameters include drain current, ION/IOFF ratio, Transconductance (gm), higher‐order terms (gm2 and gm3), Gain Bandwidth Product (GBP), Cut‐off Frequency (fT), Transit Time (τ), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), Voltage Input Intercept Point (VIP2, VIP3), Input Intercept Point (IIP3), and Third Order Intermodulation Distortion (IMD3) is thoroughly examined. Thus, the proposed GaN‐based FinFET validates as a strong potential contender for GaN‐based analog/RF applications.