Temperature independent transmission for 10 Gbps 300 m - MMF using low driving-current quantum dot laser

Yamabana, T.; We, S.; Mori, K.; Yamamoto, Tsuyoshi; Kawai, Maki; Sugawara, Mitsuru; Ishida, M.; Arakawa, Yasuhiko

doi:10.1109/ofc.2006.216006

Cited by 2 publications

(2 citation statements)

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“…The recent demonstrations of infinite temperature characteristics (T 0 ) in GaAs-based Qdots [17,18] have been obtained by introducing a p-doping within the active layer. More recently, T 0 larger than 200K have been reported in InP-based Qdots using p-doping [20] but in the room temperature range and in pulsed operation, which is far away from the required range for CW uncooled telecom applications (25:85°C).…”

Section: Influence Of P-doping On Temperature Performancesmentioning

confidence: 99%

“…But, despite the expected higher differential gain in low dimensional heterostructures, the modulation bandwidth in continuous wave (CW) mode operation, is still limited to 6-8GHz both at 1.3µm and at 1.55µm [14][15][16]. Although this bandwidth is compatible with 10Gb/s operation, as demonstrated recently at 1.3µm [17,18] and at 1.55µm [19], a larger modulation bandwidth would lead to higher extinction ratio and thus to a significant improvement of the transmission performance.…”

Section: Introductionmentioning

confidence: 97%

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Recent developments of InP-based quantum dashes for directly modulated lasers and semiconductor optical amplifiers

et al. 2008

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We report on the recent advances in InP-based Quantum Dashes (Qdashes) material for 1.55µm optoelectronic devices. We achieve highly uniform, reproducible and wavelength-controlled Qdashes, with a length ranging from 50nm to 500nm depending on the growth conditions. These Qdashes lead either to high modal gain distributed feedback (DFB) lasers or low chirp semiconductor optical amplifier (SOA). Moreover, we demonstrate that Qdashes are compatible with buried ridge stripe and shallow ridge technology and lead to very reliable lasers. Directly modulated lasers with 10GHz bandwidth are demonstrated in continuous wave mode operation. 10Gb/s transmission over 25km in semi-cooled operation is achieved using DFB buried lasers. Qdashes optimization leads to SOA with internal gain of 10 dB and a3dB optical bandwidth of 120 nm at 50°C, paving the way for semi-cooled CWDM optical sources. Furthermore, low chirp Qdashes SOA are evaluated as optical boosters after a modulated source. Although we still observe overshoots on the amplified signal, the chirp, even in their saturation regime, is low enough to allow for 50 km of transmission at 10Gb/s.

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Section: Influence Of P-doping On Temperature Performancesmentioning

confidence: 99%