Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Segers, Siegfried; Lauwaert, Johan; Clauws, Paul; Simoen, Eddy; Vanhellemont, Jan; Callens, Freddy; Vrielinck, Henk

doi:10.1088/0022-3727/46/42/425101

Cited by 3 publications

(3 citation statements)

References 25 publications

(47 reference statements)

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“…Between the H1 and H2 peak, an additional, temperature independent emission component is visible for large t W . As previously reported for Ge:Co and Ge:Cr, this emission is related to photoionization as a result of non-complete shielding of the blackbody radiation [39]. This additional emission component has been taken into account for the simulation of the spectrum in figure 2(b).The photoionization effect is only observed when using relatively large rate window times t W , which were necessary here in order to resolve the H3 contribution, appearing as a shoulder on H4.…”

Section: Resultsmentioning

confidence: 78%

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Segers¹,

Lauwaert²,

Clauws³

et al. 2014

Semicond. Sci. Technol.

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Quenching experiments have been performed on both n-and p-type Ge in a dedicated furnace using infrared lamp heating. The capture and emission characteristics of the induced deep-level defects in the quenched samples were investigated by means of Deep Level Transient Spectroscopy. For all defect levels, a high impact of capture in the transition region (slow capture) was found. An empirical approach to analyse this effect is presented, which allows to extract reliable capture crosssection parameters. The defect parameters thus obtained were compared with previously published data and it was found that some prominent quenching-induced deep levels are related to metal impurities (Cu and Ni), while others may be vacancy-related.

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Section: Resultsmentioning

confidence: 78%

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Segers¹,

Lauwaert²,

Clauws³

et al. 2014

Semicond. Sci. Technol.

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“…The second peak, which grows with increasing temperature from 200 K to 230 K remains at the same position, implying a temperature-independent hole ionization mechanism. Temperature-independent, i.e., athermal, hole emission has recently been found for Corelated deep acceptor states in p-type Ge (15). In that case, it was shown that photoionization of holes from the semi-shallow transition-metal-related levels by back-ground black-body radiation in the cryostat was responsible.…”

Section: Discussionmentioning

confidence: 94%

Deep Levels in W-Doped Czochralski Silicon

Simoen¹,

Saga

Lauwaert

et al. 2014

ECS Trans.

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The deep levels introduced by W diffusion at 950 o C in p-and ntype Czochralski silicon have been studied by Deep-Level Transient Spectroscopy (DLTS). It is shown that in p-type Si, two prominent hole traps are present, one around mid-gap, showing a steeply decaying concentration profile within 1 µm from the surface and a second center with activation energy of 0.409 eV above the valence band, exhibiting a rather flat profile beyond 0.4 µm from the surface. In n-type Si, a small peak has been consistently found, which most likely corresponds with the 0.22 eV W-related electron trap previously reported in the literature.

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“…Temperature-independent, i.e., athermal, hole emission has recently been found for Co-related deep acceptor states in p-type Ge. 25 In that case, it was shown that photo-ionization of holes from the semi-shallow transition-metal-related levels by back-ground blackbody radiation in the cryostat was responsible. This is rather unlikely for the deep W-related donor states in p-type silicon reported here.…”

Section: Discussionmentioning

confidence: 99%

Deep Levels in W-Doped Czochralski Silicon

Simoen

Saga²,

Vrielinck

et al. 2015

ECS J. Solid State Sci. Technol.

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The deep levels introduced by W diffusion at 950°C in p- and n-type Czochralski silicon have been studied by Deep-Level Transient Spectroscopy (DLTS). It is shown that in p-type Si, two prominent hole traps are present, one around mid-gap, showing a steeply decaying concentration profile within 1 μm from the surface and a second center with activation energy of 0.409 eV above the valence band, exhibiting a rather flat profile beyond 0.4 μm from the surface. In n-type Si, a small peak has been consistently found, which most likely corresponds with the 0.22 eV W-related electron trap previously reported in the literature.

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Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Cited by 3 publications

References 25 publications

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Deep Levels in W-Doped Czochralski Silicon

Deep Levels in W-Doped Czochralski Silicon

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