2017
DOI: 10.1016/j.ssc.2017.04.016
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Temperature independent Seebeck coefficient through quantum confinement modulation in amorphous Nb-O/Ni-Ta-O multilayers

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Cited by 4 publications
(4 citation statements)
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“…With the thermal conductivity data from this work (NbO/Ni 0.75 Ta 0.25 O) and the previously published Seebeck coefficient and electrical resistivity values for Nb 1.23 O/Ni 0.77 Ta 0.23 O x-ray amorphous multilayers [17], it is possible to estimate the thermoelectric figure of merit. Even though the figure of merit increases with an increasing temperature, it is within 0.1 below 650 K. This is a very small value compared to that of commercial thermoelectrics [21], but it may be enhanced at higher temperatures and by systematic compositional and multilayer period modulations, which is beyond the scope of current study.…”
Section: Resultsmentioning
confidence: 78%
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“…With the thermal conductivity data from this work (NbO/Ni 0.75 Ta 0.25 O) and the previously published Seebeck coefficient and electrical resistivity values for Nb 1.23 O/Ni 0.77 Ta 0.23 O x-ray amorphous multilayers [17], it is possible to estimate the thermoelectric figure of merit. Even though the figure of merit increases with an increasing temperature, it is within 0.1 below 650 K. This is a very small value compared to that of commercial thermoelectrics [21], but it may be enhanced at higher temperatures and by systematic compositional and multilayer period modulations, which is beyond the scope of current study.…”
Section: Resultsmentioning
confidence: 78%
“…With additions of N, filling the non-metallic vacant sites, the Seebeck coefficient and electrical resistivity of −70 µV K −1 and 500 µΩ m can be obtained at a temperature of 800 K, respectively [16]. In an amorphous and nanolaminated state (multilayered with Ni-Ta-O) it exhibits a low metallic resistivity in the range of 20 µΩ m at temperatures below 900 K, while maintaining the Seebeck coefficient of −25 µV K −1 [17]. Besides the possibility for energy generation uses, NbO is also very promising for memory applications [18], such as memristor networks in neuromorphic computing [19], and other electronic devices [20].…”
Section: Introductionmentioning
confidence: 99%
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“…A low‐dimensional structure has a different density of states (DOS) distribution compared to a 3D system because of the quantum confinement effect, which can increase S without a substantial decrease of σ (Scheme 1b). [ 30–34 ] Despite the advantages of 2D RP structures, 2D Sn‐based OHPs have not yet been considered for TE applications.…”
Section: Introductionmentioning
confidence: 99%