Temperature impact on device characteristics of charge plasma based tunnel FET with Si<sub>0.5</sub>Ge<sub>0.5</sub> source

Mishra, Varun; Verma, Yogesh Kumar; Agarwal, Lucky; Gupta, Santosh Kumar

doi:10.1088/2631-8695/ac310e

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…This clear difference in performance is caused by the lower energy bandgap observed for Mg 2 Si and other factors such as minimizing tunneling resistance and lower effective mass which in turn leads to the increase in tunnel mobility. [24] It is also apparent from Fig. 6(a) that increasing V GS leads the ON current to increase greatly.…”

Section: Electrical Performancementioning

confidence: 82%

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

et al. 2023

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The MOSFET faces the major problem of being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases, the TFETs (Tunnel Field Effect Transistors) appears to be a viable device, displaying promising characteristic as an answer to the shortcomings of the traditional MOSFETs. So far, TFET designing has been a task of sacrificing higher ON state currents for low subthreshold swing (and vice versa), and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research. This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET (HPD-GAA-TFET) with a comparison between Mg2Si and Si as source material. Charge plasma technique has been employed to induce doping in an intrinsic silicon wafer with the help of suitable electrodes. A low-energy bandgap material, i.e., Magnesium Silicide has been incorporated as source material to form a heterojunction between source and silicon-based channel. A rigorous performance comparison between Si-based GAA-TFET and HPD-GAA-TFET has been drawn with respect to electrical, RF, linearity, and distortion parameters. It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET presenting an ON-state current (ION), SS, threshold voltage (Vth), and current switching ratio as 0.377 mA, 12.660 mV/dec, 0.214 V, and 2.985×1012,respectively. Moreover, HPD-GAA-TFET holds faster switching in contrast to Si-based device and is also more reliable. Therefore, HPD-GAA-TFET shows suitable candidature for low-power applications.

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Section: Electrical Performancementioning

confidence: 82%

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

et al. 2023

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“…Temperature is a physical variable that has an indirect impact on device performance. In general, the material property of a semiconductor is affected by temperature, which impacts the energy bandgap of the device [44,45].…”

Section: Temperature Analysismentioning

confidence: 99%

Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source

Baruah

Baishya

2023

Eng. Res. Express

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In this article, a dual-metal double-gate extended-source PNPN tunnel-FET (DG-ES-DMG TFET) is proposed and investigated. The performance of conventional double-gate PNPN TFET (DG TFET) can be improved by extending a portion of the source to the channel side, which creates vertical tunneling along with the lateral tunneling, thereby enhancing the band-to-band tunneling rate and on-current in double-gate extended-source PNPN tunnel-FET (DG-ES TFET). The performance of this DG-ES TFET can be further enhanced by introducing a dual metal gate in DG-ES-DMG TFET. The performance of the TFETs is evaluated with the help of TCAD (Technology Computer-Aided Design) software. The proposed optimized DG-ES-DMG TFET provides very good performances; On-current (ION) of 1.39 x 10-3 A/µm, On-Off current ratio (ION/IOFF) of 1.10 x 1011, subthreshold swing (SS) of 20 mV/Decade, threshold voltage (VTH) of 0.37 V, and a cut-off frequency (fT) of 188 GHz. The temperature sensitivity of the TFETs is also analyzed in this work. The comparison of the proposed TFET with other existing TFETs reveals that the proposed TFET could be a good contender for low-power applications.

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Design and Analysis of Ion Selective Field Effect Transistor for Biomedical Application

Suresh

Thomas

Agarwal

2023

Lecture Notes in Electrical Engineering

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Temperature impact on device characteristics of charge plasma based tunnel FET with Si_0.5Ge_0.5 source

Cited by 5 publications

References 32 publications

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source

Design and Analysis of Ion Selective Field Effect Transistor for Biomedical Application

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Temperature impact on device characteristics of charge plasma based tunnel FET with Si0.5Ge0.5 source

Cited by 5 publications

References 32 publications

Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications

Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications

Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source

Design and Analysis of Ion Selective Field Effect Transistor for Biomedical Application

Contact Info

Product

Resources

About

Temperature impact on device characteristics of charge plasma based tunnel FET with Si_0.5Ge_0.5 source

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications