We use a scanning tunneling microscope to probe single-electron charging phenomena in individual CdSe/ ZnS ͑core/shell͒ quantum dots ͑QDs͒ at room temperature. The QDs are deposited on top of a bare Au thin film and form a double-barrier tunnel junction ͑DBTJ͒ between the tip, QD, and substrate. Analysis of roomtemperature hysteresis in the current-voltage ͑IV͒ tunneling spectra, is consistent with trapped charge͑s͒ presenting an additional potential barrier to tunneling, a measure of the Coulomb blockade. The paper describes the first direct electrical measurement of the trap-state energy on individual QDs. Manipulation of the charge occupation of the QD, verified by measuring the charging energy, ͑61.4Ϯ 2.4͒ meV, and analysis of the DBTJ, show trap states ϳ1.09 eV below the QD conduction-band edge. In addition, the detrapping time, a measure of the tunneling barrier thickness, is determined to have an upper time limit of 250 ms. We hypothesize that the charge is trapped in a quantum-dot surface state.