Temperature Evolution of Charge Transport in Chitosan Based Bio‐Resistive Random‐Access Memory Device

Abstract

This study reports on the temperature stability of the Ag/chitosan/fluorine‐doped tin oxide (Ag/chitosan/FTO)‐based bio‐resistive random‐access memory (bio‐RRAM) device through current–voltage (I–V) characteristics in the temperature range of 280–360 K. From I–V characteristics, it is affirmed that in the present device, the unipolar nature of resistive switching is highly stable and reproducible. The device is quite stable at 360 K. Activation energy is higher in the low resistance state (LRS) (≈0.096 eV) compared with the high resistance state (HRS) (≈0.076 eV) due to sufficient thermal energy to cross the barrier at high temperature. From 280 to 360 K, the conduction mechanism in the HRS of the chitosan device is followed by a direct tunneling mechanism, while the Schottky mechanism is dominated in the LRS. Barrier height calculated from Schottky mechanism in an LRS is found to increase with temperature from 0.50 eV (280 K) to 0.66 eV (360 K). Evidenced current values up to 200 pA obtained with a conducting atomic force microscope infer that conduction in the chitosan‐based device is due to filaments formed by oxygen defects. It is believed that the present results are helpful for the development of future bio‐RRAM devices.

Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for Neuroinspired Computing

“…But for HRS, the fitted slopes have three distinct values with an increasing trend, corresponding to Ohmic region ( I ∝ V ), Child's square law region ( I ∝ V 2 ), and current increase region ( I ∝ V n , n > 2) respectively, which indicates that the RS mechanism of HRS highly matches to the trap‐controlled space charge limited current (SCLC) conduction. [ 34–35 ] It has been demonstrated that the SCLC is closely associated with the injected carriers trapping or de‐trapping by the inherent pre‐existing defects in the switching layer. [ 36 ] The increase in slopes may be ascribed to the fact that the traps are gradually filled with the charge carriers.…”

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

“…The abundance of resources and simple low-cost device fabrication process of natural material-based electronic devices have opened up new gates to the advancement of the electronic world due to their applications as functional materials in various devices such as brain-inspired devices, sensors, wearable electronics, and so forth. ,− Such advantages motivate us to further explore natural materials as functional layers in resistive memory devices. As far as the literature survey is concerned, very few natural materials such as aloe vera, apple, orange peel, and so forth have been reported to show RS. ,− …”