Temperature effect on the elastic properties of yttrium garnet ferrite Y3Fe5O12

Burenkov, Yu. A.; Nikanorov, S. P.

doi:10.1134/1.1451022

Cited by 47 publications

(50 citation statements)

References 7 publications

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“…Table 1 Material properties important for dislocation dynamics in undoped semiconductor compounds compiled from the current literature, e.g. [54,60,85,86,87,88] and textbooks. For comparison the data of copper are added.…”

Section: Cell Genesis Vs Materials Specificsmentioning

confidence: 99%

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Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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Section: Cell Genesis Vs Materials Specificsmentioning

confidence: 99%

“…(1), G the shear modulus of Young (estimated after the elastic constants at 1500 K [54] to be 29 GPa) and b the Burgers vector (= ½ <110> = 0.4 nm). The well-known eq.…”

Section: Gaasmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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“…We found that the magnetization value does not and [19] . The uniaxial anisotropy is the difference between the total magnetic energy when the magnetization is oriented in plane vs. out of plane, and can be written as [22] .where the magnetoelastic term includes the shear strain (related to the distortion angle ) and the shear modulus GPa [23] , which is the value for YIG at room temperature (used as an estimate due to lag of elastic data for TmIG). This yields estimated boundaries for the expected uniaxial anisotropy in the range of kJ m kJ m , which indicates a strong easy axis out of the plane.…”

mentioning

confidence: 99%

Tm₃Fe₅O₁₂/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications

Quindeau

Avci

Liu

et al. 2016

Adv Elect Materials

121

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Harnessing the electron's second fundamental property, its spin, is the basis of spintronic phenomena and devices [1] . These include recently discovered phenomena like the quantum anomalous Hall effect [2] in magnetic topological insulators [3] , spin transfer torque [4,5] effects in nonmagnetic metal / ferromagnetic metal / oxide heterostructures and spin transfer torque (SOT) switching of ferromagnets [6,7] , and ultimately of FMIs [8] . To realize novel circuit devices based on these effects a rich variety of specifically tailored magnetic materials has still to be developed. For instance, the study of exotic phenomena occurring at the boundary of topological insulators with ferromagnets requires the latter to be insulating, yet to retain magnetic properties including PMA.One of the most prominent FMIs classes is that of iron garnets, of which the most well studied is Y 3 Fe 5 O 12 (YIG). The ultra low magnon damping characteristics [9] and magneto-optical properties [10,11] of YIG are well known. The former makes YIG a suitable candidate for spin wave logic [12] and signal transmitters [13] due to the extremely large magnon decay length of several tens of millimeters. Epitaxial YIG thin films can, in principle, also possess PMA as a result of magnetization-lattice coupling [14] for thicknesses below nm [15,16] , but the fabrication of YIG films with complete out-of-plane remanence remains elusive because of its low magnetocrystalline anisotropy and magnetoelastic coefficients. In contrast, 50 nm thick thulium iron garnet (Tm 3 Fe 5 O 12 , TmIG), has been reported to show PMA [17,18] caused by magnetoelastic anisotropy when grown epitaxially on (111)-oriented gallium gadolinium garnet (Gd 3 Ga 5 O 12 or GGG) [19] .We recently demonstrated [8] reversible magnetization switching in 8 nm thick TmIG by utilizing SOT from an adjacent platinum layer, but a detailed structural and magnetic characterization of TmIG in the few-nm thickness regime is still lacking. In the present article, we provide a comprehensive description of the structural characteristics and magnetic properties of TmIG/GGG down to a thickness of nm. Furthermore we demonstrate that efficient spin transport can be achieved through the TmIG/Pt interface by measuring spin Hall magnetoresistance (SMR) in Pt. We exploit this method to measure the anisotropy field of the strained TmIG film electrically, which is inaccessible by conventional magnetometry measurements due to the dominant paramagnetic contribution of the GGG substrate. These results emphasize the potential of TmIG as a spintronic material.Structural characterization of the TmIG films are summarized in Fig.1. With xray reflectometry (XRR) scans (not shown), we measured film thicknesses of PMA epitaxial TmIG down to nm nm . To quantify the strain state of TmIG via XRD we measured a nm thick TmIG film, since thinner films could not be resolved with enough intensity using high resolution XRD. The symmetric XRD spectra shown in Fig.1a demonstrates a fully strained film with lattice spacing of ...

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“…The magnetoelastic anisotropy is uniaxial and given by 9/4 c 44 λ 111 (π/2 γ) for a cubic lattice under rhombohedral distortion, where c 44 is the shear modulus (76 GPa for YIG 36 ). YIG has negative magnetostriction, with λ 111 = 2.4 10 6 at RT, 37 24,38 Therefore, both the magnetoelastic anisotropy (calculated from the λ 111 extrapolated from Ref.…”

confidence: 99%

Temperature-dependent Faraday rotation and magnetization reorientation in cerium-substituted yttrium iron garnet thin films

et al. 2017

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We report on the temperature dependence of the magnetic and magneto-optical properties in cerium-substituted yttrium iron garnet (Ce:YIG) thin films. Measurements of the Faraday rotation as a function of temperature show that the magnetic easy axis of thin Ce:YIG films reorients from in-plane to out-of-plane on cooling below −100 °C. We argue that the temperature-dependence of the magnetostriction and magnetocrystalline anisotropy of Ce:YIG is the dominant factor contributing to the change in easy axis direction, and we describe the changes in the magneto-optical spectra with temperature.

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Temperature effect on the elastic properties of yttrium garnet ferrite Y3Fe5O12

Cited by 47 publications

References 7 publications

Dislocation cell structures in melt‐grown semiconductor compound crystals

Dislocation cell structures in melt‐grown semiconductor compound crystals

Tm₃Fe₅O₁₂/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications

Temperature-dependent Faraday rotation and magnetization reorientation in cerium-substituted yttrium iron garnet thin films

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Temperature effect on the elastic properties of yttrium garnet ferrite Y3Fe5O12

Cited by 47 publications

References 7 publications

Dislocation cell structures in melt‐grown semiconductor compound crystals

Dislocation cell structures in melt‐grown semiconductor compound crystals

Tm3Fe5O12/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications

Temperature-dependent Faraday rotation and magnetization reorientation in cerium-substituted yttrium iron garnet thin films

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Tm₃Fe₅O₁₂/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications