Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures

Sitarek, P.; Misiewicz, J.; Huang, Y. S.; Hsu, Hung-Pin; Tiong, K. K.

doi:10.1063/1.4792065

Cited by 4 publications

(1 citation statement)

References 15 publications

(14 reference statements)

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“…In SPV spectroscopy, the change in the surface potential of a semiconductor due to redistribution of electron-hole pairs generated under optical excitation is monitored. This technique has been extensively used to characterize hetero-structures, quantum wells (QW), quantum dots, superlattices and nanostructures [2][3][4][5][6][7][8]. Several other experimental techniques such as photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE), absorption/transmission and photo-reflectance spectroscopy (PR), etc, can also give valuable information about quantum structures.…”

Section: Introductionmentioning

confidence: 99%

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Muralidharan¹,

Ramesh²,

Mishra³

et al. 2014

Semicond. Sci. Technol.

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We present surface photo-voltage (SPV) measurements on molecular beam epitaxy (MBE) grown single quantum well (SQW) laser structures. Each layer in the hetero-structure has been identified by measurement of the SPV signal after a controlled sequential chemical etching process. These results have been correlated with high resolution x-ray diffraction and photoluminescence (PL) measurements. Quantum confined Stark effect and the carrier screening of electric field have been taken into consideration both theoretically and experimentally to account for the differences observed in SPV and PL results. It is shown that SPV can be used as a very effective tool for evaluation of hetero-structures involving multiple layers.

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Section: Introductionmentioning

confidence: 99%

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Muralidharan¹,

Ramesh²,

Mishra³

et al. 2014

Semicond. Sci. Technol.

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Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

Tian

2014

Journal of Applied Physics

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We report the electronic transition mechanisms for hydrothermally prepared silicon nanoporous pillar array (Si-NPA), investigated by surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy. By comparing the SPV spectra of single crystal silicon (sc-Si) with that of Si-NPA, the silicon nano-crystallites (nc-Si)/SiOx nanostructure in the Si-NPA could produce SPV in the wavelength range of 300–580 nm. And 580 nm (∼2.14 eV) was considered as the absorption edge of the nc-Si/SiOx nanostructure. After the sample was annealed and oxidized in air at different temperatures, both the SPV in the wavelength range of 300–580 nm and the PL emission band around 690 nm from the nc-Si/SiOx nanostructure weakened and disappeared as the annealing temperature increased from 100 to 500 °C. But both the red-infrared PL band (>710 nm) and the violet-blue PL band were enhanced by increasing the annealing temperature. After 2 years of natural oxidation in air, the SPV features for sc-Si disappeared completely, and the SPV characteristics of the nc-Si/SiOx nanostructure could be clearly observed. After analysis, the Si–O structure related localized states at the nc-Si/SiOx interface dominated the electronic transitions during the red PL emission and the SPV for the nc-Si/SiOx nanostructure in Si-NPA, the red–infrared PL was due to the Si=O structure related electronic transitions, and the violet-blue PL emission could attribute to the oxygen-related defect related recombination of the photo induced carriers.

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Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots

Singh

Porwal

Mondal

et al. 2014

Journal of Applied Physics

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Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are found to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images.

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Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures

Cited by 4 publications

References 15 publications

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots

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