Temperature-dependent study of n-ZnO∕p-GaN diodes

Abstract

This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO∕p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800°C for 60s. The Hall measurement and the x-ray diffraction pattern are measured to study the n-ZnO films. The temperature sensitivity coefficients of the I-V characterizations are obtained by different substrate temperatures (25, 50, 100, and 150°C) and the extracted values are 2.10, 1.93, 3.22, and 1.36mV∕°C in the forward bias and 8.7, 8.0, 4.6, and 2.3mV∕°C in the reverse bias, respectively. The fabricated n-ZnO∕p-GaN diode with ZnO annealing temperatures at 800°C demonstrates the lowest temperature dependence.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

“…Alloying MgO with ZnO produces Mg x Zn 1−x O compounds with band gaps spanning from 3.4 to 7.7 eV. These previous reports on n-ZnO/p-GaN diodes, [4] n-MgZnO/p-GaN diodes, [5] and the temperature-dependent characteristics of the ZnO/GaN HBTs [6] had been studied. Several studies have reported ZnO-based p-n junctions and diodes, including n-ZnO/p-GaN, n-ZnO/p-SiC, and n-ZnO/p-ZnO.…”

“…Several studies have reported ZnO-based p-n junctions and diodes, including n-ZnO/p-GaN, n-ZnO/p-SiC, and n-ZnO/p-ZnO. [4,7,8] However, relatively few studies have reported the use of an Al-doped Mg x Zn 1-x O/p-GaN junction diode with its current-voltage (I-V) characterizations. Thus, this study reports the deposition of n-type Al-doped Mg x Zn 1-x O (AMZO) films onto p-GaN using radio-frequency (RF) magnetron sputtering followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds.…”

Fabrication and Characterization of n-ZnO Nanonails Array/p+-GaN Heterojunction Diode

“…[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] In particular, ZnO presents abundant micro/nanostructures by adjusting the growth methods and conditions, these ZnO micro/nanostructures exhibit multifunctional applications such as ultraviolet (UV) micro-/nano-laser, [14][15][16] field emitter 17 and UV micro-/nano-light emitting diode. [18][19][20][21][22] Recently the ZnO-based UV light-emitting diodes (LEDs) attracts considerable attention for its promising application in the next generation UV LEDs. However, the lack of an authentic procedure of the production and reproducibility of p-ZnO material impedes the fabrication of homojunction LEDs, although some homojunction ZnO LEDs have been reported.…”

“…18 19 Therefore, the reported ZnO-based LEDs are mainly heterostructures by employing the p-Si and p-GaN as the hole-transporting layer. [20][21][22][23][24] The n-ZnO/p-GaN LEDs are more preferable because ZnO and GaN semiconductors has the same wurtzite structure and similar electronic properties. The n-ZnO nanostructures/p-GaN LEDs show better electroluminescence (EL) efficiency than the n-ZnO film/ p-GaN LEDs, because the quantum confinement effect, surface area and carrier injection rate can be improved in the ZnO nanostructures.…”

Device applications of transition metal oxide thin films

“…The device performance of both the two-terminal devices, like the resistive switching random access memory [53][54][55][56], p-n heterojunction [57][58][59][60][61], and the three-terminal devices, like the Chapter 2: Literature review 21 thin film transistor [62][63][64][65][66] can be evaluated by current-voltage measurement. By equipped with the TRIO-TECH TC1000 temperature controller, the study of the temperature dependence of the device performance can be realized.…”