Temperature-dependent short-channel parameters of FinFETs

Das, Rinku Rani; Maity, Santanu; Choudhury, Atanu; Chakraborty, Apurba; Bhunia, Chandan Tilak; Sahu, Partha Pratim

doi:10.1007/s10825-018-1212-y

Cited by 11 publications

(4 citation statements)

References 16 publications

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“…On the other hand, intrinsic gain, denoted as A v and calculated as the ratio of transconductance to output conductance [2], is a critical parameter. Maximizing the intrinsic gain involves increasing G m while decreasing G d .…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the semiconductor industry is searching for an alternative to the MOSFET, which overcomes the problems of MOSFET and withstands the negative impacts of downscaling [1]. With down-scaling of device attributes, various undesired side effects are experienced, called non-deal effects or short channel effects (SCEs) [2]. A few non-ideal effects in MOSFET are subthreshold swing (SS), draininduced barrier lowering (DIBL), variation of threshold voltage (V th ), leakage current, tunneling current, and channel length modulation, mobility variation, velocity saturation, etc.…”

Section: Introductionmentioning

confidence: 99%

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Multi-Channel Step FinFET With Spacer Engineering

Das,

James

2024

IEEE Access

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Multi-channel FinFET (M ch -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have examined the performance of the multi-channel-based step FinFET (M chstep FinFET) structure with spacer engineering. The results obtained from this simulation work indicate that M ch -step FinFET is a good competitor for future improvisation of CMOS technology. The proposed device has improved drain conductivity, transconductance (G m ), intrinsic gain (A v ), and drain conductance (G d ) performance by introducing high-K dielectric spacer material by 38.2%,46.12%, 88.57%, and 22.55%, respectively. The proposed device with a spacer is preferable to obtain better performance regarding ON current and device efficiency.INDEX TERMS Semiconductor device, Short Channel effect (SCE), Subthreshold swing (SS), Bipolar Junction transistor (BJT).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multi-Channel Step FinFET With Spacer Engineering

Das,

James

2024

IEEE Access

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“…However, MOSFET faces various unwanted problems owing to reducing the device dimensions. The overscaling of device dimensions in MOSFET introduces a non-ideal effect called short channel effects (SCEs) [39]. These SCEs affect the device's efficiency.…”

Section: Transistor Technology In Neuromorphic Devices a Evolution Of...mentioning

confidence: 99%

FETs for Analog Neural MACs

Das,

Rajalekshmi,

Pallathuvalappil

et al. 2024

IEEE Access

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This study provides a comprehensive view on neural network systems with implemented with crossbar circuits, and device-level understanding of modern FET technologies in neuromorphic computing. This work categorizes and analyzes various transistor types, including ion-gate, ferroelectric, and floatinggate transistors, shedding light on their unique advantages and applications in neuromorphic computing. In this overview, we explore the fundamental principles, recent advancements, and significant trends in transistor-based neuromorphic devices, providing valuable insights into this innovative field. This work also examines resistive memories and 2D materials, that could revolutionize transistor fabrication for neuromorphic devices. Further, various research challenges, limitations, and potential research directions are discussed.INDEX TERMS Field Effect Transistor (FET), CMOS, Memristors, Multiply and Accumulate (MAC), 2D materials, FeFET, IGT.

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“…Reference [31] investigated the influence of temperature on the linearity and harmonic distortion performance of asymmetric under‐lapped FinFET (U‐FinFET) and shows that distortion is optimized in the sub‐threshold region at high temperature. Das et al reported 32 the gate overlap to drain and source of FinFET reduce the leakage current and improve drain characteristics with a minimized value of SCEs. Reference [33] studied and explored the impact of the temperature variation of FinFET to analyze the short channel effect and observed that the device is more immune at low temperature.…”

Section: Introductionmentioning

confidence: 99%

Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

Das

Maity

Chowdhury

et al. 2021

Int J RF Mic Comp-Aid Eng

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This dissertation demonstrates the reliability issues associated with the temperature of Ge multi‐channel fin shaped field‐effect transistor (Mch‐FinFET). Temperature dependence on short channel effectss such as threshold voltage (Vth), sub‐threshold swing (SS), and switching ratio are observed. The variation in temperature on various important radio frequency (RE)/analog, linearity, and harmonic distortion characteristics are studied and analyzed over a wide range of temperatures (300–500 K). The simulation study revealed that Mch‐FinFET devices exhibit 61.6% improvement in ION with minimum SS value. The improvement of SS, switching ratio and Vth can be observed with temperature fall. The enhancement in performance of various RF/analog attributes such transconductance, device efficiency, transconductance frequency product, gain frequency product, cut‐off frequency, and intrinsic gain with lowering of temperature. However, Mch‐FinFET device provides a significant improvement of higher‐order current and voltage intercept points such as IIP3, VIP2, VIP3, and 1 dB compression point with lesser harmonic distortion such as HD2, HD3, and THD at elevated temperature. The superior efficiency of DC and RF/analog attributes, greater linearity, and minor harmonic distortion performance of Mch‐FinFET make it more considerable to design low power Complementary metal–oxide–semiconductor (CMOS) circuits.

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Temperature-dependent short-channel parameters of FinFETs

Cited by 11 publications

References 16 publications

Multi-Channel Step FinFET With Spacer Engineering

Multi-Channel Step FinFET With Spacer Engineering

FETs for Analog Neural MACs

Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

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