Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

Reddy, P.R. Sekhar; Janardhanam, V.; Shim, Kyu–Hwan; Reddy, V. Rajagopal; Lee, Sung‐Nam; Park, Se-Jeong; Choi, Chel‐Jong

doi:10.1016/j.vacuum.2019.109012

Cited by 66 publications

(21 citation statements)

References 43 publications

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“…However, there is no report of a Ni/β-Ga 2 O 3 reaction for Ni deposited at room temperature. Other authors have examined this interface via high-resolution TEM (HRTEM)/STEM and observed an atomically sharp interface with no evidence of chemical interdiffusion. − …”

Section: Discussionmentioning

confidence: 99%

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam evaporation are characterized electrically with current density–voltage (J–V) and capacitance–voltage (C–V) measurements. The ideality factor and Schottky barrier heights measured from J–V and C–V are determined to be 1.32, 1.37 eV, and 1.98 eV, respectively. Due to the peculiarities of the electrical properties of the Au/β-Ga2O3 Schottky contacts, scanning transmission electron microscopy (STEM) was performed. High-angle annular dark-field (HAADF)-STEM imaging reveals an inhomogeneous chemical reaction occurred at the metal–semiconductor interface. The reaction is signified by void formation 5–20 nm below the interface, Ga diffusion into Au at the interface, and Ga interstitial diffusion toward the interface. Energy-dispersive X-ray spectroscopy (EDS) mapping shows Ga diffusion into the Au contact region accompanied by a transitional region of 4–5 nm.

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Section: Discussionmentioning

confidence: 99%

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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“…with R 300 the resistance at 300 K, and α an exponent (in IMECAS, 17 [14] KU, 17 [15] UF, 17 [16] UF, 17 [16] IMECAS, 18 [17] GMU, 17 [18] CNU, 19 [19] CIE, 19 [20] NICT, 16 [21] NUS, 19 [22] NUS, 19 [23] α=1.8 Vertical SBDs Lateral MOSFETs Fig. 2, α = 1.14).…”

Section: Effect Of the Temperature On The Forward Characteristic Of A β-Ga 2 O 3 Schottky Diodementioning

confidence: 99%

Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

Buttay

Wong

Wang

et al. 2020

Microelectronics Reliability

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β-Ga 2 O 3 is an emerging ultra-wide-bandgap semiconductor material offering superior power material limits over Si, SiC, and GaN as well as the availability of large-diameter wafers growing from its own melt. However, β-Ga 2 O 3 devices performance may be limited by the relatively poor thermal conductivity of the material.In this paper, we investigate the behavior of β-Ga 2 O 3 Schottky diodes in the condition of forward current surge to explore their electro-thermal ruggedness and the related thermal management. An analytical electro-thermal device model is calibrated with experimental devices and TCAD simulations. Then this device model is incorporated into a SPICE electro-thermal network model, which is used to simulate the device temperature rise during the surge transient, considering various device and packaging configurations (i.e. various chip thicknesses and chip orientations).It is found that provided heat is removed from the junction side, a β-Ga 2 O 3 Schottky diode offers a robustness to surge current exceeding that of a SiC Schottky diode. The low thermal conductivity of β-Ga 2 O 3 is found to be overcome by the enhanced heat extraction from junction-side cooling, as well as by the intrinsically small temperature dependence of the on-resistance (and conduction loss) of β-Ga 2 O 3 devices.

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“…In past few years, there was an increasing interest to study SBD based on β-Ga 2 O 3 and its parameter variations at low temperatures. For example, Redy et al 13 examined the temperature-dependent I− V characteristics of Au/Ni/β-Ga 2 O 3 SBD using thermionic emission mechanism. A 2.76 ideality factor was obtained at 100 K. Also, Sheoran et al 14 V) characteristics in a temperature range of 78−350 K. They also obtained an ideality factor of about 3.46 at 100 K with the consideration of thermionic current.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The high ideality factor value is related to the tunneling effect in agreement with the literature high extracted values at low temperatures. 13,14 Therefore, the extraction method of η from the total current might be considered. In this work, FOM parameters are extracted from the thermionic current component only.…”

Section: ■ Introductionmentioning

confidence: 99%

Low Temperature Modeling of Ni/β-Ga₂O₃ Schottky Barrier Diode Interface

Labed

Park

Meftah

et al. 2021

ACS Appl. Electron. Mater.

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Schottky barrier diodes (SBD) are usually qualified by their figures of merit. Evolution of these figures of merit with temperature is an indication of the different conduction mechanisms involved in SBD. Figures of merit extraction at different temperatures is therefore of great importance. Thermionic emission conduction modeling of I–V characteristics is usually considered when extracting these figures of merit. However, high-ideality factor values are obtained at low temperatures because of other conduction mechanisms involved. In this work, TCAD simulation is used to model measured Ni/β-Ga2 O3 SBDs at a temperature range of 100–300 K. This modeling separates tunneling current from thermionic emission current; hence, a reasonable ideality factor of 6.04 was obtained from the total current. An ideality factor of about 1.04 was extracted from the thermionic current component only. Evolution with temperature of this combination of tunneling and thermionic emission is examined. It is concluded that, with increasing temperature, tunneling is reduced while thermionic emission is increased; thus, an ideality factor is almost independent of temperature and close to unity is obtained.

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Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

Cited by 66 publications

References 43 publications

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

Low Temperature Modeling of Ni/β-Ga₂O₃ Schottky Barrier Diode Interface

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Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

Cited by 66 publications

References 43 publications

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

Low Temperature Modeling of Ni/β-Ga2O3 Schottky Barrier Diode Interface

Contact Info

Product

Resources

About

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Low Temperature Modeling of Ni/β-Ga₂O₃ Schottky Barrier Diode Interface