Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

Abstract

We report a reversal in negative capacitance and voltage modulated light emission from AlGaInP based multi-quantum well electroluminescent diodes under temperature variation. Unlike monotonically increasing CW light emission with decreasing temperature, modulated electroluminescence and negative capacitance first increase to a maximum and then decrease while cooling down from room temperature. Interdependence of such electronic and optical properties is understood as a competition between defect participation in radiative recombination and field assisted carrier escape from the quantum well region during temperature variation. The temperature of maximum light emission must coincide with the operating temperature of a device for better efficiency.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

“…Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias Kanika Bansal,1 Mohamed Henini, 2 Marzook S. Alshammari, 3 and Shouvik Datta We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure.…”

“…Hence, it becomes important to understand the electrical impedance of these diodes under such high forward bias not only to gain knowledge about the physical processes they undergo but also to make them more useful in various applications. In our previous studies, [1][2][3][4] we investigated the impedance of electroluminescent diodes (LEDs and LDs) under charge carrier injection. We observed that as the forward bias increases, the reactive component of the impedance demonstrates negative capacitance (NC).…”

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures

“…Here, E Th is the thermal activation energy, is the thermal prefactor representing the heat bath, T is the temperature in degree Kelvin, s is the time period of the transition, and k B is the Boltzmann constant. This band diagram was further used 32 to explain the observed anomalous temperature dependence of VMEL and negative capacitance. In this work, we extend these results to electrically probe the presence of excitons during electroluminescence (EL).…”

“…Earlier, we explored [30][31][32] the connection between voltage modulated electroluminescence (VMEL) and electrical properties of GaInP/AlGaInP based MQW lasers. Under low frequency modulation, we demonstrated the mutual nonexclusivity of radiative and non-radiative transitions.…”

Negative capacitance switching via VO2 band gap engineering driven by electric field

“…Besides, recently the negative capacitance effect has been proposed and investigated in different quantum well devices. 9 Indeed, the negative capacitance is a surprisingly common, meanwhile relatively unknown phenomenon. The understanding of the negative capacitance physical mechanism is important for optimized device design.…”