Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Du, Yong; Chen, G; Zhang, M.S

doi:10.1016/j.ssc.2004.05.026

Cited by 5 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This behavior was attributed to a size‐induced phase transition from the orthorhombic to tetragonal symmetry 16. However, since the temperature‐dependent studies of Bi 4 Ti 3 O 12 showed that no significant changes in intensity of this band should be observed due to the phase transition,35 the intensity decrease observed in Ref. 16 is most likely also due to plate‐like nature of the synthesized nanocrystals.…”

Section: Resultsmentioning

confidence: 98%

Phonon properties of nanosized bismuth layered ferroelectric material—Bi₂WO₆

Mączka

Macalik

Hermanowicz

et al. 2009

J Raman Spectroscopy

View full text Add to dashboard Cite

Nanosized Bi 2 WO 6 was synthesized by a mild hydrothermal crystallization process. This method allowed obtaining plate-like crystallites of very small thickness (down to 3 nm). The effect of particle size on the structure and properties of Bi 2 WO 6 was studied by X-ray diffraction (XRD), transmission electron microscopy, and Raman and infrared spectroscopies. It has been shown that the orthorhombic distortion decreases with decreasing particle size, but the structure of the smallest crystallites is still orthorhombic. Raman studies have also revealed a very strong intensity decrease for those modes that appear mainly for incident and scattered light polarized perpendicular to the layers. This behavior has been attributed to a decrease in the orthorhombic distortion and a plate-like shape of the nanocrystallites.

show abstract

Section: Resultsmentioning

confidence: 98%

Phonon properties of nanosized bismuth layered ferroelectric material—Bi₂WO₆

Mączka

Macalik

Hermanowicz

et al. 2009

J Raman Spectroscopy

View full text Add to dashboard Cite

show abstract

“…The results indicate the formation of the single phase of SBT for x= 0.01and 0.03; and secondary phase of Sr 3 Ti 2 O 7 appears when x>0. 10. The coincidence of diffraction peaks for different x imply that Nb doping do not affect the basic crystal structure [6].…”

Section: Structure Features Of Nb-doped Sbtmentioning

confidence: 91%

“…Not all of the BO 6 octahedra could be occupied by single ions in partially doped samples. Therefore, the presence of both the ions at B-sites results in two stretching wave numbers, leading to asymmetry [8][9][10].…”

Section: Structure Features Of Nb-doped Sbtmentioning

confidence: 99%

Structure and ferroelectric property of Nb-doped SrBi4Ti4O15 ceramics

2007

View full text Add to dashboard Cite

Nb-doped SrBi 4 Ti 4 O 15 (SBT) was produced by conventional method. Structural and ferroelectric properties of SBT were examined as a function of niobium composition. Analyzing the structure futures of SBT by XRD, XPS and Raman spectrum, Nb 5+ substituted Ti 4+ to form NbO 6 octahedron and did not change the structure of SBT. The XRD patterns indicated the formation of the single phase of SBT for x=0.01and 0.03 and secondary phase of Sr 3 Ti 2 O 7 appeared when x>0.1. To compare the effect of Nb doping, the ferroelectric properties (hysteresis loop, piezoelectric coefficient) of Nb-doped SBT were measured. The SBT doped with x=0.15 was found to exhibit higher remanent polarization with d 33 =17 pC/N.

show abstract

“…This effect indicates a change in the structural distortion of Table 1. Phonon mode frequencies in the Raman spectra of the BTO/MgO films compared with ones of powder [14], ceramics [15][16][17], nanocrystal [18], films [19,20] and crystals [13,21,22].The frequencies were taken from the original papers. In some cases, the authors do not consider very weak lines in the spectra, limited to only the dominant modes.…”

Section: Raman Scattering Spectroscopymentioning

confidence: 99%

Structure, lattice dynamics, properties of bismuth titanate heterostructures

Мухортов¹,

Golovko²,

Анохин³

et al. 2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We investigated the epitaxial Bi4Ti3O12 (BTO) thin films with different thicknesses on a (0 0 1) MgO substrate with a Ba0.4Sr0.6TiO3 buffer layer (4 nm). The crystallographic axis [1 0 0] of Bi4Ti3O12 film is rotated on degrees relative to [1 0 0] MgO axis. When the thickness of Bi4Ti3O12 film is less than 40 nm, the unit cell of the film is compressed in the normal to the interface plane direction. In cases of large film thicknesses, the sign of strain changes and correspondingly the unit cell is stretched. Switched spontaneous polarization in the interface plane with 180° domain structure occurs at 10 nm film thickness and increases with a thickness up to 55 C cm−2. Changes in the Raman spectra of the Bi4Ti3O12 films indicates to increase of monoclinic distortion of the film unit cell in comparison with the bulk unit cell. The anisotropy of in-plane dielectric properties and the effect of internal strain on dielectric properties for the Bi4Ti3O12 films are confirmed by the study of the dielectric characteristics of the films.

show abstract

Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Cited by 5 publications

References 19 publications

Phonon properties of nanosized bismuth layered ferroelectric material—Bi₂WO₆

Phonon properties of nanosized bismuth layered ferroelectric material—Bi₂WO₆

Structure and ferroelectric property of Nb-doped SrBi4Ti4O15 ceramics

Structure, lattice dynamics, properties of bismuth titanate heterostructures

Contact Info

Product

Resources

About

Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Cited by 5 publications

References 19 publications

Phonon properties of nanosized bismuth layered ferroelectric material—Bi2WO6

Phonon properties of nanosized bismuth layered ferroelectric material—Bi2WO6

Structure and ferroelectric property of Nb-doped SrBi4Ti4O15 ceramics

Structure, lattice dynamics, properties of bismuth titanate heterostructures

Contact Info

Product

Resources

About

Phonon properties of nanosized bismuth layered ferroelectric material—Bi₂WO₆

Phonon properties of nanosized bismuth layered ferroelectric material—Bi₂WO₆